Plasma filming apparatus, and plasma filming method

Abstract

Provided is a plasma filming apparatus, which can keep high not only a filming rate but also an in-plane homogeneity of a film thickness. The plasma filming apparatus comprises a treating container (44) made evacuative, a placing bed (46) for placing a treatment object (W) thereon, a ceiling plate (88) mounted in the ceiling and made of a dielectric material for transmitting microwaves, gas introducing means (54) for introducing a treating gas containing a filming raw gas and a support gas, and microwave introducing means (92) having a plain antenna member disposed on the ceiling side for introducing the microwaves. The introducing means includes central gas injection holes (112A) for the raw gas positioned above the central portion of the treatment object, and a plurality of peripheral gas injection holes (114A) for the raw gas arrayed above the peripheral portion of the treatment object and along the peripheral direction of the same. Above the treatment object and between the central gas injection holes (112A) and the peripheral gas injection holes (114A), there are disposed plasma shielding portions (130) for shielding the plasma along the peripheral direction.

Description

technical field [0001] The present invention relates to a plasma film forming apparatus and a plasma film forming method for forming a thin film by applying plasma generated by microwaves to a semiconductor wafer or the like. Background technique [0002] In recent years, with the increase in density and miniaturization of semiconductor products, plasma processing equipment has been widely used in order to perform various processes such as film formation, etching, and ashing in the manufacturing process of semiconductor products. In particular, since microwaves can stably generate plasma even in a high-vacuum state with a relatively low pressure of about 0.1 mTorr (13.3 mPa) to several Torr (hundreds of Pa), microwaves are used to generate high-density plasma. Plasma microwave plasma treatment device. [0003] Such plasma processing apparatuses are disclosed in Patent Documents 1 to 5 and the like. Here, refer to Figure 11 to Figure 13 , a general description will be give...

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Problems solved by technology

[0017] However, in this case, since the SiO 2 The binding energy is large, so there is not only a very low film formation rate, but also a problem that the in-plane uniformity of the film thickness deteriorates

The reason is that since the above-mentioned shower head 34 is formed in a grid shape, the grid portion formed in the entire horizontal plane of the processing space S has a plasma shielding function, so the plasma is blocked by the grid portion, and thus cannot obtain enough to form SiO 2 energy of

In this case, although various attempts have been made to change the shape of the gas introduction unit 10, satisfactory results have not yet been obtained.

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