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Preparation method of back-contact electrode structure of crystal silicon solar cell

A back-contact electrode and solar cell technology, applied in the field of solar cells, can solve problems such as being unsuitable for large-scale large-scale production, complex processes, and difficult industrialization, and achieve the effects of solving battery performance degradation, high conversion efficiency, and low cost.

Inactive Publication Date: 2009-09-16
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because these high-efficiency batteries use evaporation, photolithography, laser ablation and other processes, the process is complicated, the cost is high, and it is not suitable for large-scale production, so it is difficult to realize industrialization

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The preparation method of the back contact electrode structure of the crystalline silicon solar cell provided by the present invention is: on the crystalline silicon chip that is deposited with the SiNx thin film passivation layer, the SiNx thin film passivation layer is first carried out the aluminum paste screen printing that contains glass frit, and then All-aluminum paste screen printing is carried out, and the back contact electrode structure is prepared after high-temperature sintering.

[0025] Wherein, a crystalline silicon wafer is selected as the substrate, and a SiNx thin film is first deposited on the silicon wafer. The crystalline silicon wafer can be monocrystalline silicon or polycrystalline silicon, and a 5-inch monocrystalline silicon wafer is selected in this embodiment.

[0026] According to requirements, design screen printing screens with certain apertures and different densities. In this embodiment, the screen printing screens have apertures of 0.1-...

Embodiment 2

[0032] The preparation method of the back contact electrode structure of the crystalline silicon solar cell provided by the present invention comprises the following steps:

[0033] (1) With a crystalline silicon wafer as a substrate, a SiNx thin film is deposited on the silicon wafer to form a passivation layer;

[0034] (2) On the passivation layer of the SiNx film, the aluminum paste containing glass frit is used for screen printing to prepare a partial back contact structure;

[0035] (3) Screen printing is used to print a layer of aluminum on the local back contact structure, and the back contact electrode structure is prepared after high temperature sintering;

[0036] (4) The solar cell is prepared by conventional cell technology by utilizing the back contact electrode structure.

[0037] In this embodiment, the polysilicon wafer is cleaned first, and then SiNx film is deposited. First, an aluminum layer containing glass frit is screen-printed on the SiNx film to prepa...

Embodiment 3

[0040] The preparation method of the back contact electrode structure of the crystalline silicon solar cell provided by the present invention is: on the crystalline silicon chip that is deposited with the SiNx thin film passivation layer, the SiNx thin film passivation layer is first carried out the aluminum paste screen printing that contains glass frit, and then All-aluminum paste screen printing is carried out, and the back contact electrode structure is prepared after high-temperature sintering.

[0041] The specific process is:

[0042] (1) With a crystalline silicon wafer as a substrate, a SiNx thin film is deposited on the silicon wafer to form a passivation layer;

[0043] (2) On the passivation layer of the SiNx film, the aluminum paste containing glass frit is used for screen printing to prepare a partial back contact structure;

[0044] (3) Screen printing is used to print a layer of aluminum on the local back contact structure, and the back contact electrode struc...

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Abstract

The invention discloses a preparation method of a back-contact electrode structure of a crystal silicon solar cell. The method comprises the steps of performing silk-screen printing of aluminium paste containing frit on a SiNx film passivation layer on a crystal silicon chip formed with the SiNx film passivation layer by deposition, and then performing the silk-screen printing of complete aluminium paste, and finally sintering at high temperature to prepare the back-contact electrode structure. The method of the invention has simple working procedures and low cost, and is suitable for mass production and for preparing the crystal silicon solar cell with high transformation efficiency in the condition that the silicon chip is continuously thinned.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for preparing a back contact electrode structure of a crystalline silicon solar cell. Background technique [0002] With the blowout development of the output of crystalline silicon solar cells in the world, the supply of polysilicon raw materials is tight and the cost of materials remains high. For this reason, the world's solar cell manufacturers are constantly looking for thin silicon solar cell technologies and methods. The continuous thinning of silicon wafers can save silicon materials and improve the utilization rate of silicon materials, thus helping to alleviate the current tense situation of silicon materials. At present, silicon wafers used in silicon solar cells have dropped from the initial thickness of 350 μm to the mainstream thickness of 280 μm in 2004, to the current thickness of 180-200 μm, and the utilization rate of silicon wafers has increased by 32%. Ta...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 梁宗存沈辉陈达明
Owner SUN YAT SEN UNIV
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