Unlock instant, AI-driven research and patent intelligence for your innovation.

Light emissive device

A technology of light-emitting devices and emitting materials, which is applied in the direction of electric solid-state devices, semiconductor devices, light sources, etc., and can solve the problems that OLEDs cannot be successfully manufactured.

Inactive Publication Date: 2009-09-16
CDT OXFORD +1
View PDF21 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although the preparation of OLEDs capable of producing light with CIE (Commission Internationale d'Eclairage) coordinates close to white light was proposed, the applicant realized that such OLEDs could not be successfully manufactured for practical use

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light emissive device
  • Light emissive device
  • Light emissive device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0080] A white emitting polymer comprising a fluorescent blue emitting triarylamine repeat unit of formula 4 and a fluorescent red emitting repeat unit of formula 8 was prepared by Suzuki polymerization as described in WO 00 / 53656.

[0081] Red phosphorescent dendritic materials containing tris(phenylisoquinoline)iridium(III) were prepared as described in WO 02 / 066552.

[0082] By spin-coating, Baytron P Form Poly(ethylenedioxythiophene) / poly(styrenesulfonate) (PEDT / PSS) obtained from HC Starck of Leverkusen, Germany. A hole transport layer was deposited from xylene solution to a thickness of about 10 nm on the PEDT / PSS layer by spin coating and heated at 180° C. for 1 hour. The aforementioned blends of fluorescent polymers and phosphorescent dendrimers were deposited from xylene solution on the F8-TFB layer to a thickness of about 65 nm by spin coating. On the semiconducting polymer, a Ba / Al cathode is formed on the polymer by evaporating a first layer of barium to a thick...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A composition for use in an organic light emissive device, the composition comprising a fluorescent organic light emissive material and a phosphorescent organic light emissive material of the same colour.

Description

technical field [0001] The present invention relates to organic light-emitting devices and compositions used in the preparation of organic light-emitting devices. Background technique [0002] An organic light emitting device (OLED) generally includes a cathode, an anode, and an organic light emitting region between the anode and the cathode. Light emitting organic materials may comprise small molecule materials such as those described in US4539507, or polymeric materials such as those described in PCT / WO90 / 13148. The cathode injects electrons into the light-emitting region and the anode injects holes. Electrons and holes combine to generate photons. [0003] figure 1 A typical cross-sectional structure of an OLED is shown. OLEDs are typically fabricated on glass or plastic substrates coated with a transparent anode 2, eg indium tin oxide (ITO) layer. The ITO-coated substrate is covered with at least one layer of electroluminescent organic material 3 and a cathode mater...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/06H01L51/00H05B33/14H10K99/00
CPCC08G61/125C08G61/123H01L51/5012C08L65/00C09K2211/1029C08G73/0266H01L51/0085C09K2211/1458H01L51/0036C09K11/06C09K2211/185C09K2211/1007H05B33/14C08G61/124H01L51/0037C08G61/126H01L51/0043C09K2211/1483C09K2211/1433C09K2211/1491H10K85/113H10K85/1135H10K85/151H10K85/342H10K50/11C08G73/02C08L79/02H10K85/00C09K2211/1466C09K2211/18H10K85/111H10K50/00
Inventor R·威尔逊
Owner CDT OXFORD