RF power amplifier stability network

Abstract

A radio frequency (RF) generator for applying RF power to a plasma chamber includes a DC power supply (B+). A radio frequency switch generates the RF power at a center frequency f0. A low-pass dissipative terminated network connects between the DC power supply (B+) and the switch and includes operates at a first cutoff frequency. The switch outputs a signal to an output network which improves the fidelity of the system. The output network generates an output signal fed to a high-pass subharmonic load isolation filter that passes RF power above a predetermined frequency. A low-pass harmonic load isolation filter may be inserted between the output network and the high- pass subharmonic load isolation filter, and a high-pass terminated network may connect to the output of the output network. The high-pass terminated network dissipates RF power above a predetermined frequency. An offline short or shunt network may connect between the output of the switch and the input of the output network for shorting the output of the switch at predetermined frequencies.

Description

technical field [0001] The present invention relates to systems and methods for stabilizing radio frequency (RF) power amplifiers in plasma processing systems. Background technique [0002] The statements in this section merely provide background information related to the present disclosure and may not constitute prior art. [0003] Plasma processing systems are used in semiconductor manufacturing. The system employs a plasma chamber that alters the electrical properties of a raw material, such as silicon, to fabricate semiconductor components. Examples of such components include transistors, dielectric and bulk inductors, microprocessors, and random access memories. The plasma chamber is capable of performing sputtering, plasma etching, plasma deposition, and / or reactive ion etching during fabrication. [0004] In operation, the plasma chamber houses a semiconductor workpiece. The gas is then introduced into the plasma chamber at low pressure. An RF power generator ap...

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Problems solved by technology

So the fidelity is less than ideal

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