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Method for preparing diamond/Cu composite material with high heat conductivity

A composite material and diamond technology, applied in metal material coating process, semiconductor/solid-state device components, semiconductor devices, etc., to improve thermal conductivity, increase thermal conductivity, and prevent high-temperature graphitization

Active Publication Date: 2012-02-29
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problem of interface modification between diamond and Cu, give full play to the excellent thermal properties of diamond, and prepare composite materials with high thermal conductivity

Method used

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  • Method for preparing diamond/Cu composite material with high heat conductivity
  • Method for preparing diamond/Cu composite material with high heat conductivity

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0010] Embodiment 1: adopt the method for magnetron sputtering to plate the Cr-B (mass ratio about 40: 60) composite layer of 4 μ m in thickness on the diamond powder surface, diamond particle size is 50 μ m, Cu powder particle size 50 μ m, the ratio of diamond and Cu powder The volume ratio is 55:45.

[0011] According to the set ratio, the diamond powder and Cu powder of the coated composite layer were mixed in a ball mill for 5 hours. The speed of the ball mill was 120 rpm. For sintering, the sintering temperature is 850°C, the sintering pressure is 40MPa, the heating rate is 35°C / min, and the holding time is 8 minutes. The thermal conductivity of the diamond / Cu composite material prepared by this process reaches 500W / m·K, and the density is higher than 99%.

Embodiment 2

[0012] Embodiment 2: adopt the method for magnetron sputtering to plate the Cr-B (mass ratio about 50: 50) composite layer of 2 μ m in thickness on the diamond powder surface, the diamond particle size is 80 μ m, the Cu powder particle size 80 μ m, the ratio of diamond and Cu powder The volume ratio is 60:40.

[0013] According to the set ratio, mix the coated diamond powder and Cu powder in a ball mill for 4 hours. The speed of the ball mill is 120 rpm. After mixing evenly, put the mixed powder into a graphite mold and put them together in a hot-press furnace Hot press sintering is carried out at a temperature of 900° C., a sintering pressure of 40 MPa, an argon atmosphere, and a holding time of 5 minutes. The thermal conductivity of the diamond / Cu composite material prepared by this process reaches 510W / m·K, and the density is higher than 99%.

Embodiment 3

[0014] Embodiment 3: adopting the method for magnetron sputtering to plate a Cr-B layer with a thickness of 3 μm on the surface of diamond powder, the diamond particle size is 90 μm, and the volume ratio of diamond to Cu powder is 65:35.

[0015] Put the Cr-B-coated diamond powder into the graphite grinding tool, then put the pure Cu ingot on top of the diamond powder, and finally put them together in the infiltration furnace, and raise the temperature to 40°C / min. 1000°C, and then apply a pressure of 1 MPa to infiltrate the molten Cu into the pores between the diamond powders, and the holding time is 6 minutes. The thermal conductivity of the diamond / Cu composite material prepared by this process reaches 505W / m·K, and the density is higher than 99%.

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Abstract

The invention belongs to the field of research of metal-based composite materials, and relates to a method for preparing a diamond / Cu composite material with high heat conductivity. The method is characterized in that: before the composite material is prepared, a Cr-B composite layer of 0.1 to 5mu m is plated on the surface of diamond powder by adopting a magnetron sputtering method, the thickness of the Cr-B composite layer plated on the surface of the diamond is 0.1 to 5mu m, the ratio of the Cr to B is 30-70:70-30, the granularity of the diamond powder is 10 to 150mu m, and the volume ratio of the diamond to Cu is 55-75:45-25. The heat conductivity of diamond / Cu is improved by compounding with Cu through powder metallurgy, heat pressing or infiltration technology; and by establishing astrong chemical bond interface transition layer consisting of diamond, (Cr-B) C and matrix Cu between the diamond and Cu, the heat conductivity of the composite material is improved to more than 500 W / m.K from the prior about 170 W / m.K. The method not only can effectively improve the heat conductivity of the diamond / Cu composite material, but also can prevent high-temperature graphitization of the diamond powder.

Description

technical field [0001] The invention belongs to the research field of metal matrix composite materials, and relates to a method for preparing high thermal conductivity diamond / Cu composite materials. Background technique [0002] With the rapid development of information technology, the integration of chips in electronic components is getting higher and higher, the power is getting higher and higher, and the heat dissipation requirements for packaging materials are also getting higher and higher. At the same time, the thermal expansion coefficient of the packaging material should also match the ceramic substrate and chip, because the thermal expansion coefficient difference between the packaging material and the ceramic substrate and chip is too large, it is easy to cause chip and ceramic substrate burst or some solder joints, Cracking of the welds, which can lead to failure of electronic devices. Therefore, thermal conductivity (TC) and thermal expansion coefficient (CTE) ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/36C22C1/00C22C1/05C22C32/00C23C14/35
Inventor 曲选辉任淑彬何新波沈晓宇淦作腾董应虎秦明礼
Owner UNIV OF SCI & TECH BEIJING