Supercharge Your Innovation With Domain-Expert AI Agents!

Method for preparing zinc aluminate nano-material

A technology of nanomaterials and zinc aluminate, which is applied in the direction of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of difficult recycling of residues, cumbersome preparation process, long preparation cycle, etc., and achieve short preparation cycle and process Simple process and easy-to-achieve effects

Active Publication Date: 2009-10-14
TSINGHUA UNIV +1
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the preparation of zinc aluminate by sol-gel method has the following disadvantages: first, the use of (NaOH), zinc nitrate (Zn(NO 3 ) 2 ) and aluminum nitrate (Al(NO 3 ) 3 ) as a raw material, the residue is not easy to recycle, which will cause environmental pollution
Second, the preparation process is cumbersome and the preparation cycle is long
Third, this method can only prepare zinc aluminate nanopowder materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing zinc aluminate nano-material
  • Method for preparing zinc aluminate nano-material
  • Method for preparing zinc aluminate nano-material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] The technical solution will be further described in detail below in conjunction with the accompanying drawings.

[0014] see figure 1 and figure 2 The embodiment of this technical solution provides a method for preparing zinc aluminate nanomaterials, which specifically includes the following steps:

[0015] In step 1, a growth device 30 is provided, and the growth device 30 includes a heating furnace 302 and a reaction chamber 304 .

[0016] In this embodiment, the reaction chamber 304 is preferably a quartz tube with a gas inlet 306 and a gas outlet 308 at both ends thereof. The quartz tube is movable in the heating furnace 302, and its length is longer than the heating furnace 302, so that when the quartz tube is pushed and pulled in the experiment, a part of the quartz tube can always be placed in the heating furnace 302.

[0017] The reaction chamber 304 also includes a carrying device 312 which is a container with a high melting point. In this embodiment, the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
lengthaaaaaaaaaa
purityaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing zinc aluminate nano-material. The method comprises the following steps: providing a growing device with a heating furnace and a reaction chamber; providing zinc and aluminum, and placing the zinc and aluminum in the reaction chamber; providing a growing substrate and placing the growing substrate in the reaction chamber; leading gas containing oxygen into the reaction chamber and heating to 700-1100 DEG C to grow the zinc aluminate nano-material.

Description

technical field [0001] The invention relates to a preparation method of a one-dimensional nanometer material, in particular to a preparation method of a zinc aluminate nanometer material. Background technique [0002] The direction of development of the semiconductor industry is smaller, faster, and lower energy consumption. However, after entering the era of nanoelectronics from the era of microelectronics, the traditional semiconductor manufacturing technology - photolithography ("top-down" technology) is becoming more and more difficult to meet the current and future requirements. Therefore, "bottom-up" technology, or self-assembly technology is considered to be the trend of future development. At present, people have used this self-assembly technology to synthesize various nanostructures, including nanowires and nanotubes, and their potential applications include nanoelectronics, nanooptics, and nanosensors. [0003] Zinc aluminate has attracted much attention due to i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01F7/02B82B3/00
CPCB82Y30/00C01P2004/64C01G9/00
Inventor 孙海林姜开利李群庆范守善
Owner TSINGHUA UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More