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Controllable preparation method for silicideb nanometer belts/nanometer sheets

A silicide and nanobelt technology, applied in metal silicides, chemical instruments and methods, from chemically reactive gases, etc., can solve the problems of inability to synthesize nanobelt silicides, expensive, and complicated preparation methods.

Inactive Publication Date: 2011-11-09
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, for nanostructured silicides, the preparation methods are still relatively complicated and expensive, and are not suitable for large-scale applications, and the current methods can only prepare nanowire-like silicides, but cannot synthesize nanobelts. or nanoplatelet silicide

Method used

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  • Controllable preparation method for silicideb nanometer belts/nanometer sheets
  • Controllable preparation method for silicideb nanometer belts/nanometer sheets
  • Controllable preparation method for silicideb nanometer belts/nanometer sheets

Examples

Experimental program
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Effect test

Embodiment 1

[0024] The experimental device is attached figure 1 . Put a foamed nickel sheet with a size of 10 (length) × 10 (width) × 1 (thickness) mm at the center of the heating furnace, and heat it at a rate of 10K / min at N 2 Under protection, the heating furnace was heated to 900°C, and then heated with H 2 SiHCl as carrier gas 3 Introduced into the heating furnace, while another H 2 It is also introduced into the furnace as a diluent gas. Among them, H 2 The flow rate of diluent gas is 85mL / min, H 2 The flow rate of the carrier gas is 25mL / min. After reacting for 30min, the heating furnace was in N 2 Natural cooling under protection. The main chemical reaction formula of this embodiment is as follows: SiHCl 3 +H 2 →Si+3HCl and ySi+xNi→Ni x Si y . Ni in this example x Si y can be Ni 3 Si, Ni 5 Si 2 、Ni 2 Si, Ni 3 Si 2 , NiSi or NiSi 2 Wait for the mixture.

[0025] The resulting product is a nickel silicide nanoribbon, and its morphology is as attached figure ...

Embodiment 2

[0027] The experimental device is attached figure 1 . Put a nickel foil with a size of 10 (length) × 10 (width) × 0.16 (thickness) mm at the center of the heating furnace, and at a rate of 10K / min in N 2 Under protection, the heating furnace was heated up to 900 °C, and then heated with H 2 SiHCl as carrier gas 3 Introduced into the heating furnace, while another H 2 It is also introduced into the furnace as a diluent gas. Among them, H 2 The flow rate of diluent gas is 50mL / min, H 2 The flow rate of the carrier gas is 25mL / min. After reacting for 30min, the heating furnace was in N 2 Natural cooling under protection. The main chemical reaction formula of this embodiment is as follows: SiHCl 3 +H 2 →Si+3HCl and ySi+xNi→Ni x Si y . Ni in this example x Si y can be Ni 3 Si, Ni 5 Si 2、Ni 2 Si, Ni 3 Si 2 , NiSi or NiSi 2 Wait for the mixture.

[0028] The resulting product is a nickel silicide nanosheet, and its morphology is as attached image 3 shown. In...

Embodiment 3

[0030] The experimental device is attached figure 1 . Put a titanium foil with a dimension of 10 (length) × 10 (width) × 0.27 (thickness) mm at the center of the heating furnace, and put it under N at a rate of 10K / min. 2 Under protection, the heating furnace was heated to 900°C, and then heated with H 2 SiHCl as carrier gas 3 Introduced into the heating furnace, while another H 2 It is also introduced into the furnace as a diluent gas. Among them, H 2 The flow rate of diluent gas is 80mL / min, H 2 The flow rate of the carrier gas is 20mL / min. After reacting for 30min, the heating furnace was in N 2 Natural cooling under protection. The main chemical reaction formula of this embodiment is as follows: SiHCl 3 +H 2 →Si+3HCl and ySi+xTi→Ti x Si y . This embodiment Ti x Si y Can be Ti 3 Si, Ti 5 Si 4 , TiSi or TiSi 2 Wait for the mixture.

[0031] The obtained product is titanium silicide nanoribbon, and its morphology is as attached Figure 4 shown. In this e...

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Abstract

The invention relates to a controllable silicideb nanometer structure preparation technology, in particular to a preparation method for silicideb nanometer belt / nanometer sheets. The preparation method simultaneously induces chlorosilane and hydrogen in a reaction chamber to carry out a decomposition reaction on the surface of a metal basal body at 500 DEG C to 1500 DEG C so that the silicideb nanometer belt / nanometer sheets can grow in original positions of the surface of the metal basal body. The invention can easily realize the selective preparation of the nanometer belt / nanometer sheets bycontrolling a flow ratio of the chlorosilane and the hydrogen. The prepared silicideb nanometer belt has the following typical dimensions: the length is from 10 microns to 50 microns, the width is from 0.5 micron to 5 microns, and the thickness is 100 microns to 200 microns; and the silicideb nanometer sheets have the following typical dimensions: the length and the width are from 5 microns to 50microns, and the width is from 10 microns to 100 nanometers. In a short, the method can realize the controllable preparation of various silicideb nanometer belts / nanometer sheets, breaks through thedefect the prior silicideb only has a nanometer line existing state and can be applied to nanometer devices and lithium ion battery negative electrode materials.

Description

Technical field: [0001] The invention relates to a technology for controllably preparing silicide nanostructures, in particular to a method for preparing silicide nanobelts or nanosheets. Background technique: [0002] Due to the characteristics of high melting point, high strength, high oxidation and corrosion resistance, narrow band gap and low resistance, silicide has good application prospects in micro / nano electronic devices and high temperature structural materials. Especially transition metal silicides (such as NiSi, TiSi 2 、CoSi 2 ), are currently being widely used in the semiconductor industry (such as CMOS devices) as ohmic contacts, Schottky barrier contacts, gate electrodes, local interconnect materials, etc. With the continuous reduction of device size in the semiconductor industry, the traditional top-down lithography method can no longer meet the requirements on the nanometer scale. However, various nanostructure silicides prepared based on bottom-up thinki...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/10C30B29/60C30B25/00C01B33/06
Inventor 成会明张宏立李峰刘畅闻雷
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI