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A method for preparing semiconducting single-walled carbon nanotubes by non-metallic catalyst SIC

A technology of single-walled carbon nanotubes and non-metallic catalysts, applied in the direction of carbon nanotubes, semiconductor devices, non-metallic elements, etc., can solve the problems of unstable performance of high-activity devices, achieve good application prospects, simple and easy-to-control process, The effect of wide applicability

Active Publication Date: 2020-10-16
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thus, it solves the problem of unstable performance of the device under harsh conditions such as high temperature and high humidity caused by the high activity of the existing residual metal catalyst

Method used

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  • A method for preparing semiconducting single-walled carbon nanotubes by non-metallic catalyst SIC
  • A method for preparing semiconducting single-walled carbon nanotubes by non-metallic catalyst SIC
  • A method for preparing semiconducting single-walled carbon nanotubes by non-metallic catalyst SIC

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Experimental program
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Effect test

Embodiment 1

[0034] The tube furnace was heated up to the preset growth temperature at a heating rate of 20 °C / min. Put the silicon wafer with 1nm silicon carbide (SiC) film on the surface ion-sputtered by Ar ion beam physical deposition method into the 100°C low temperature zone of the tube furnace, close the tube furnace, and control the quartz tube reactor of the tube furnace Vacuum down to below 10Pa; turn off the vacuum pump, and introduce a hydrogen flow of 500 ml / min to restore the normal pressure of the quartz tube reactor; push the quartz boat loaded with silicon wafers to a constant temperature zone of 900°C, and pretreat the catalyst for 5 minutes Then adjust the flow rate of hydrogen to 200 ml / min, feed 800 ml / min of argon as a carrier gas, and pass through the ethanol container placed in the ice-water mixture with 20 ml / min of argon, and the carbon tube growth time is 10 min. After the growth, turn off the hydrogen gas and the argon gas flowing through ethanol, push the quartz...

Embodiment 2

[0040] The tube furnace was heated up to the preset growth temperature at a heating rate of 20 °C / min. Put the silicon wafer with 2nm silicon carbide (SiC) film on the surface ion-sputtered by Ar ion beam physical deposition method into the 100°C low temperature zone of the tube furnace, close the tube furnace, and control the quartz tube reactor of the tube furnace Vacuum down to below 10Pa; turn off the vacuum pump, and introduce a hydrogen flow of 500 ml / min to restore the normal pressure of the quartz tube reactor; push the quartz boat loaded with silicon wafers to a constant temperature zone of 900°C, and pretreat the catalyst for 5 minutes Then adjust the flow rate of hydrogen to 200 ml / min, feed 800 ml / min of argon as a carrier gas, and pass through the ethanol container placed in the ice-water mixture with 20 ml / min of argon, and the carbon tube growth time is 10 min. After the growth, turn off the hydrogen gas and the argon gas flowing through ethanol, push the quartz...

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Abstract

The invention relates to the field of controlled preparation of semiconductive single-wall carbon nanotubes, in particular to a method for preparing semiconductive single-wall carbon nanotubes by a non-metallic catalyst SiC. Using silicon carbide nanoparticles obtained by ion sputtering as a catalyst, first pretreatment in a high temperature and hydrogen atmosphere to evaporate the silicon atoms on the surface of the silicon carbide nanoparticles, and the carbon atoms left on the surface form a carbon cap; then in a hydrogen atmosphere The carbon source is introduced, and the hydrogen gas with etching effect etches the highly active metallic carbon cap, thereby obtaining semiconductive enriched single-walled carbon nanotubes. In the present invention, carbon caps are formed by self-decomposing a small amount of atoms on the surface of the catalyst during the pretreatment process, and then the highly active metallic carbon caps are removed by the etching effect of hydrogen, so that the semiconductor-enriched single-walled carbon nanotubes without metal impurities are realized. controllable growth.

Description

technical field [0001] The invention relates to the field of controlled preparation of semiconducting single-wall carbon nanotubes, in particular to a method for controllable preparation of semiconducting single-wall carbon nanotubes by high-melting-point non-metallic SiC nanoparticles, through high-temperature treatment, silicon atoms on the surface of silicon carbide nanoparticles After evaporation, the carbon atoms left on the surface form carbon caps, and the highly active metallic carbon caps are etched by hydrogen gas with etching effect, which further regulates the growth conditions of single-walled carbon nanotubes and realizes the control of semiconducting single-walled carbon nanotubes preparation. Background technique [0002] Single-walled carbon nanotubes can be regarded as one-dimensional hollow tubes formed by curling graphene in a certain way. Due to the angle between the graphene sheets constituting single-walled carbon nanotubes relative to the axial direct...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/162C01B32/159H01L51/30B82Y30/00
CPCB82Y30/00C01P2004/04C01P2002/82C01P2006/40C01P2006/80H10K85/221
Inventor 刘畅程敏侯鹏翔李金成成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI