Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for preparing semiconductor single-wall C nanotubes by nonmetallic catalyst SiC

A technology of single-walled carbon nanotubes and non-metallic catalysts, which is applied in the direction of carbon nanotubes, non-metallic elements, semiconductor devices, etc., can solve the problems of unstable performance of high-activity devices, and achieve good application prospects, wide applicability, and process Simple and easy-to-control effects

Active Publication Date: 2018-04-17
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thus, it solves the problem of unstable performance of the device under harsh conditions such as high temperature and high humidity caused by the high activity of the existing residual metal catalyst

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing semiconductor single-wall C nanotubes by nonmetallic catalyst SiC
  • Method for preparing semiconductor single-wall C nanotubes by nonmetallic catalyst SiC
  • Method for preparing semiconductor single-wall C nanotubes by nonmetallic catalyst SiC

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The tube furnace was heated up to the preset growth temperature at a heating rate of 20 °C / min. Put the silicon wafer with 1nm silicon carbide (SiC) film on the surface ion-sputtered by Ar ion beam physical deposition method into the 100°C low temperature zone of the tube furnace, close the tube furnace, and control the quartz tube reactor of the tube furnace Vacuum down to below 10Pa; turn off the vacuum pump, and introduce a hydrogen flow of 500 ml / min to restore the normal pressure of the quartz tube reactor; push the quartz boat loaded with silicon wafers to a constant temperature zone of 900°C, and pretreat the catalyst for 5 minutes Then adjust the flow rate of hydrogen to 200 ml / min, feed 800 ml / min of argon as a carrier gas, and pass through the ethanol container placed in the ice-water mixture with 20 ml / min of argon, and the carbon tube growth time is 10 min. After the growth, turn off the hydrogen gas and the argon gas flowing through ethanol, push the quartz...

Embodiment 2

[0040] The tube furnace was heated up to the preset growth temperature at a heating rate of 20 °C / min. Put the silicon wafer with 2nm silicon carbide (SiC) film on the surface ion-sputtered by Ar ion beam physical deposition method into the 100°C low temperature zone of the tube furnace, close the tube furnace, and control the quartz tube reactor of the tube furnace Vacuum down to below 10Pa; turn off the vacuum pump, and introduce a hydrogen flow of 500 ml / min to restore the normal pressure of the quartz tube reactor; push the quartz boat loaded with silicon wafers to a constant temperature zone of 900°C, and pretreat the catalyst for 5 minutes Then adjust the flow rate of hydrogen to 200 ml / min, feed 800 ml / min of argon as a carrier gas, and pass through the ethanol container placed in the ice-water mixture with 20 ml / min of argon, and the carbon tube growth time is 10 min. After the growth, turn off the hydrogen gas and the argon gas flowing through ethanol, push the quartz...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention relate to the field of control preparation of semiconductor single-wall C nanotubes, in particular to a method for preparing semiconductor single-wall C nanotubes by a nonmetallic catalyst SiC. The method comprises the steps as follows: SiC nanoparticles obtained with an ion sputtering method are used as a catalyst and pretreated at a high temperature in H2 atmosphere, so that Si atoms on the surface of the SiC nanoparticles are evaporated, and C atoms left on the surface are formed into C caps; a C source is introduced in the H2 atmosphere, the high-activity metallic C caps areetched by H2 with etching effect, and accordingly, the semiconductor-enriched single-wall C nanotubes are obtained. The trace atoms on the catalyst surface in a pretreatment process are decomposed toform the C caps, and the metallic C caps with high activity are then removed by the etching action of H2, so that controllable growth of the semiconductor-enriched single-wall C nanotubes without metal impurities is realized.

Description

technical field [0001] The invention relates to the field of controlled preparation of semiconducting single-wall carbon nanotubes, in particular to a method for controllable preparation of semiconducting single-wall carbon nanotubes by high-melting-point non-metallic SiC nanoparticles, through high-temperature treatment, silicon atoms on the surface of silicon carbide nanoparticles After evaporation, the carbon atoms left on the surface form carbon caps, and the highly active metallic carbon caps are etched by hydrogen gas with etching effect, which further regulates the growth conditions of single-walled carbon nanotubes and realizes the control of semiconducting single-walled carbon nanotubes preparation. Background technique [0002] Single-walled carbon nanotubes can be regarded as one-dimensional hollow tubes formed by curling graphene in a certain way. Due to the angle between the graphene sheets constituting single-walled carbon nanotubes relative to the axial direct...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/162C01B32/159H01L51/30B82Y30/00
CPCB82Y30/00C01P2004/04C01P2002/82C01P2006/40C01P2006/80H10K85/221
Inventor 刘畅程敏侯鹏翔李金成成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI