Method for preparing cobalt ferrite magnetic thick film

A cobalt ferrite, thick film technology, applied in the application of magnetic film to substrate, magnetic materials, magnetic objects, etc., to achieve the effects of easy control of components, simple equipment, and good magnetic properties

Inactive Publication Date: 2009-10-28
TONGJI UNIV
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, there is no report on the preparation of cobalt ferrite magnetic thick film by electrophoretic de

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing cobalt ferrite magnetic thick film
  • Method for preparing cobalt ferrite magnetic thick film
  • Method for preparing cobalt ferrite magnetic thick film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Electrophoretic composite deposition of magnetoelectric thick films of CFO on platinum (Pt) substrates:

[0027] A. The chemical raw material used is cobalt ferrite nanopowder, and the solvent is n-butanol. Weigh 0.3g of cobalt ferrite powder respectively, then stir the powder in 60mL n-butanol solution for 10 minutes, and then sonicate Disperse for 20 minutes to form a well-mixed suspension (suspension concentration: 5 g / L).

[0028] B. Adjust the used constant current / constant voltage power supply to a constant current state, and maintain a constant output value of 10μA.

[0029] C. Fix the platinum electrode used for electrophoretic deposition in the electrophoresis tank, the distance between the two plates is 2cm, and keep the two plates parallel during the electrophoresis process.

[0030] D. Connect the two electrodes to the power supply, and keep for 15 minutes to obtain a film with a thickness of 5 μm.

[0031] E. Take the thick film obtained by electrophoreti...

Embodiment 2

[0035] Electrophoretic composite deposition of magnetoelectric thick films of CFO on platinum electrodes:

[0036] A. The chemical raw material used is cobalt ferrite powder prepared by hydrothermal treatment, and the solvent is acetylacetone. First weigh 0.6g of cobalt ferrite powder, and then stir the powder in 60mL n-butanol solution for 10 minutes. Then ultrasonically disperse for 20 minutes to form a uniformly mixed suspension (suspension concentration: 10 g / L).

[0037] B. Adjust the used constant current / constant voltage power supply to a constant current state, and maintain a constant output value of 10μA.

[0038] C. Fix the platinum electrode used for electrophoretic deposition in the electrophoresis tank, the distance between the two plates is 2cm, and keep the two plates parallel during the electrophoresis process.

[0039] D. Connect the two electrodes to the power supply and keep for 30 minutes to obtain a thick film with a thickness of 10 μm.

[0040] E. Take ...

Embodiment 3

[0044] Electrophoretic composite deposition of magnetoelectric thick films of CFO on platinum electrodes:

[0045] A. The chemical raw material used is cobalt ferrite powder prepared by hydrothermal treatment, and the solvent is acetylacetone. First weigh 0.6g of cobalt ferrite powder, and then stir the powder in 60mL n-butanol solution for 10 minutes. Then ultrasonically disperse for 20 minutes to form a uniformly mixed suspension (suspension concentration: 10 g / L).

[0046] B. Adjust the used constant current / constant voltage power supply to a constant current state, and maintain a constant output value of 10μA.

[0047] C. The substrate used for electrophoretic deposition is aluminum oxide, and the electrodes coated with high-temperature-resistant materials are fixed in the electrophoresis tank. The distance between the two plates is 2 cm, and the two plates are always kept parallel during the electrophoresis process.

[0048] D. Connect the two electrodes to the power sup...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Saturation magnetizationaaaaaaaaaa
Residual magnetizationaaaaaaaaaa
Login to view more

Abstract

The invention relates to the field of electronic material and device and discloses a method for preparing a cobalt ferrite magnetic thick film. The method comprises the following steps that the cobalt ferrite is dispersed in a solvent to prepare a suspension with uniform concentration; subsequently, the thick film is prepared by electrophoretic deposition under a constant electric field condition. The prepared cobalt ferrite magnetic thick film has high coercive field and magnetic saturation intensity, can be applied to the preparation of thick film capacitors and phase shifters and has the advantages of simple equipment, low cost, quick film-forming process and easily controlled components.

Description

technical field [0001] The invention belongs to the field of electronic materials and devices, and in particular relates to a method for preparing a cobalt ferrite magnetic thick film. Background technique [0002] Among the spinel-structured ferrites, spinel nano-ferrites are widely used in information storage systems, medical diagnostic technology, magnetic fluid technology, magneto-caloric and magnetic-refrigerated due to their good magnetic properties. . [0003] Cobalt Ferrite CoFe 2 o 4 It has high magnetocrystalline anisotropy, coercive field, saturation magnetization and stable chemical properties, so CoFe can be used 2 o 4 These properties make functional devices. At present, the research on magnetoelectric materials mainly focuses on CoFe 2 o 4 and NiFe 2 o 4 superior. Among them, cobalt ferrite (CoFe 2 o 4 , abbreviated as CFO) is a magnetic material with the advantages of high magnetocrystalline anisotropy, coercive field and saturation magnetization,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01F41/14H01F1/00
Inventor 翟继卫莫伟锋张玲
Owner TONGJI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products