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Polishing liquid composition

A technology of composition and polishing liquid, which is applied in the direction of polishing composition containing abrasive, zirconium compound, grinding device, etc., can solve the problems of not being able to reduce scratches, not being able to fully ensure the grinding speed, etc.

Active Publication Date: 2009-10-28
KAO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, polishing using these polishing liquid compositions cannot sufficiently ensure the polishing speed, nor can it reduce scratches.

Method used

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  • Polishing liquid composition
  • Polishing liquid composition
  • Polishing liquid composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0033] An example of the polishing liquid composition of the present invention will be described using Embodiment 1.

[0034] The composite oxide particles constituting the polishing liquid composition according to Embodiment 1 are represented by, for example, the following composition formula.

[0035] Ce x Zr 1-x o 2

[0036] Wherein, x satisfies the conditional formula 0

[0037] In the composite oxide particles, ceria and zirconia are uniformly fused to form a solid phase, and the spectrum obtained by analyzing the composite oxide particles by X-ray (Cu-Kα1 ray, λ=0.154050nm) diffraction method , the following peaks were observed.

[0038] That is, in this spectrum, at least: a peak (the first peak) whose apex is within the range of 28.61 to 29.67° at the diffraction angle 2θ, and a peak (the seco...

Embodiment approach 2

[0130] Another example of the polishing liquid composition of the present invention is described in Embodiment 2.

[0131] The polishing liquid composition of the present embodiment contains, in addition to the aforementioned composite oxide particles, a water-soluble organic compound that contributes to the formation of a polishing surface having a high surface flatness.

[0132] In the polishing liquid composition of this embodiment, by containing water-soluble organic compound as additive, can form the high polishing surface of planarity, and, by using the composite oxide particle that does not have in the past containing cerium and zirconium as abrasive grain, Grinding speed can be increased.

[0133] The reason for this is presumed as follows. The composite oxide particles containing cerium and zirconium contained in the polishing liquid composition of the present embodiment can be used as abrasive grains capable of polishing objects to be polished at high speed, as will...

Embodiment

[0211]

[0212] 1. Base material of aluminosilicate glass substrate for hard disk

[0213] A substrate made of an aluminosilicate glass substrate for hard disks (hereinafter simply referred to as "glass substrate") was prepared. The glass substrate was ground in advance with a polishing liquid composition containing cerium oxide particles as a polishing agent. The surface roughness was 0.3 nm (AFM-Ra), the thickness was 0.635 mm, the outer diameter was 65 mm, and the inner diameter was 20 mm.

[0214] 2. Synthetic quartz wafer

[0215] A synthetic quartz wafer (manufactured by Optostar Co., Ltd.) having a diameter of 5.08 cm (2 inches) and a thickness of 1.0 mm was prepared by grinding both main surfaces.

[0216] 3. Silicon wafer with TEOS (tetraethoxysilane) film

[0217] A TEOS film having a thickness of 2000 nm formed on a silicon wafer having a diameter of 20.32 cm (8 inches) by a parallel plate type plasma chemical vapor deposition method (p-CVD method) was prepared....

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Abstract

Disclosed is a polishing liquid composition which comprises a composite oxide particle comprising cerium and zirconium, a dispersing agent and an aqueous medium. In the powder X-ray diffraction spectra produced by irradiating the composite oxide particle with CuKa1 ray (lambda=0.154050 nm), there are a peak having a peak top lying within a range of diffraction angle 2theta (theta is a Bragg angle)28.61-29.67 DEG (the first peak), a peak having a peak top lying within a range of diffraction angle 2theta 33.14-34.53 DEG (the second peak), a peak having a peak top lying within a range of diffraction angle 2theta 47.57-49.63 DEG (the third peak) and a peak having a peak top lying within a range of diffraction angle 2theta 56.45-58.91 DEG (the forth peak), and the first peak has a half-width of 0.8 DEG or less.

Description

technical field [0001] The present invention relates to a polishing liquid composition used in chemical mechanical polishing (CMP) in the manufacturing process of semiconductor devices, or polishing treatment in the manufacturing process of precision glass products or display-related products. In addition, the present invention also relates to a polishing method using the above-mentioned polishing liquid composition, a method for manufacturing a glass substrate, and a method for manufacturing a semiconductor device. Background technique [0002] In oxide films (for example, silicon oxide films) constituting semiconductor devices, base materials of glass substrates exemplified below, that is, base materials of chemically strengthened glass substrates such as aluminosilicate glass substrates, and base materials of crystallized glass substrates such as glass ceramic substrates , the base material of a synthetic quartz glass substrate used as a substrate for a photomask, or the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14B24B37/00H01L21/304C01F17/235
CPCB24B37/044C09G1/02H01L21/304B24B7/241H01L21/31053C09K3/1463C01G25/00C09K3/1436C01G25/02C01P2002/50C01P2002/54C01P2002/72C01P2004/62C01P2004/64C01F17/235C09K3/14
Inventor 代田真美米田康洋
Owner KAO CORP