Storage unit of resistance storage and manufacture method thereof

Abstract

The invention discloses a storage unit of a resistance storage and a manufacture method thereof. The manufacture method of the storage unit comprises the following steps: providing a semiconductor substrate and a dielectric layer on the semiconductor substrate; forming a bottom electrode in the dielectric layer; forming a first storage dielectric layer on the bottom electrode; depositing a reaction metal layer on the first storage dielectric layer, wherein the reaction metal is metal having the characteristic of binary resistor after being oxidized; forming a top electrode covering the reaction metal layer; and enabling the first storage dielectric layer to oxidize the reaction metal layer to form a second storage dielectric layer. The storage unit of a resistance storage and the manufacture method thereof can reduce, control and regulate oxygen content in a first storage medium and enhance resistance conversion performance of the storage medium.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a storage unit of a resistance memory and a manufacturing method thereof. Background technique [0002] At present, the development of new storage technologies with low cost, high speed, high storage density, simple manufacturing and good compatibility with the current complementary metal oxide (CMOS) semiconductor integrated circuit process has attracted widespread attention worldwide. The memory technology of resistive random access memory (RRAM, referred to as resistive memory) based on metal oxides with resistive switching characteristics is currently the focus of development by many device manufacturers, because this technology can provide higher density, lower cost and lower power consumption non-volatile memory. The resistance value of the RRAM memory cell will change greatly after the pulse voltage is applied, and this resistance value can still be ma...

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Problems solved by technology

[0005] In addition, the storage medium 130 is formed by using plasma treatment (plasmatreatment) or thermal annealing (thermal annealing) process in an oxygen environment, usually an insulating metal oxide layer without binary resistance characteristics is formed on the surface of the dielectric film, for example figure 1 The shown dielectric film 131 and insulating metal oxide layer 132, and the insulating metal oxide layer 132 will affect the storage performance of the storage medium 130, taking metal oxide Cu as an example, the dielectric film 131 is low-priced cuprous oxide (Cu 2 O), the insulating metal oxide layer 132 is high-priced copper oxide (CuO), Cu 2 O has a binary resistance characteristic, while CuO does not have a binary resistance characteristic. Therefore, before writing data (programming) to the memory cell, it is necessary to apply a relatively large voltage to break down the insulating metal oxide layer 132. This will have a negative impact on the reliability of the RRAM

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