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Registration mark and manufacturing method thereof

A technology of registration mark and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, photolithographic process exposure device, photolithographic process of pattern surface, etc., and can solve the problems of limited optimization space and unclear registration mark shape. , to achieve the effect of large optimization space

Active Publication Date: 2009-11-25
FOUNDER MICROELECTRONICS INT
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  • Summary
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Problems solved by technology

[0005] One embodiment of the present invention provides a method for manufacturing registration marks, which is used to solve the problem that the shape of the registration marks is not clear and the space is optimized when the wafer is covered with a thick dielectric layer or metal layer in the integrated circuit manufacturing process. limited questions

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  • Registration mark and manufacturing method thereof
  • Registration mark and manufacturing method thereof

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Embodiment Construction

[0019] The method for manufacturing the registration mark and the registration mark provided by the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0020] The registration mark manufacturing method of the embodiment of the present invention is used for photolithography registration in the integrated circuit manufacturing process, and avoids the appearance of the registration mark being unclear after the wafer is covered with a thick dielectric layer or metal layer. Difficult problems occur with registration.

[0021] The manufacturing method of the registration mark according to the embodiment of the present invention will be described below by taking the manufacturing of a DMOS tube as an example.

[0022] The registration mark manufacturing method of the embodiment of the present invention includes the steps:

[0023] S1. Forming a first alignment mark on the dielectric layer of the silicon wafer substrat...

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Abstract

The invention relates to lithography registration in the manufacturing of integrated circuits. To solve the problem of unclear morphology of registration marks caused by the covering of medium layers or metal layers in the prior manufacturing of the integrated circuits, the invention discloses a registration mark and a manufacturing method thereof. The manufacturing method for the registration mark comprises the steps of: forming a first registration mark on a medium layer of a silicon chip substrate; and forming at least one layer of second registration mark directly over the first registration mark. The registration mark comprises the first registration mark formed on the medium layer of the silicon chip substrate, and the at least one layer of the second registration mark formed directly over the first registration mark. The registration mark is used for the lithography registration in the manufacturing of the integrated circuits, particularly the lithography registration of DMOS transistors.

Description

technical field [0001] The present invention relates to integrated circuit manufacturing, and more particularly to photolithography registration in integrated circuit manufacturing. Background technique [0002] MOS tube is the abbreviation of Metal-Oxide-Semiconductor Field Effect Transistor (Metal-Oxide-Semiconductor Field Effect Transistor), and the MOS tube with double-diffused self-aligned structure is called DMOS tube. The DMOS tube has the characteristics of high drain terminal breakdown voltage, small on-resistance and high current drive capability, and has good switching performance. Therefore, DMOS tubes are often used in high-current and high-voltage applications, and the requirements for high current and high voltage limit the use of thicker aluminum layers when making chips. However, when a thick aluminum layer covers the photolithographic registration marks left by the previous layer, it will seriously affect the morphology of the registration marks, such as ...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L23/544G03F7/20G03F9/00
Inventor 谢丁生潘川方绍明刘鹏飞马万里潘光然
Owner FOUNDER MICROELECTRONICS INT
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