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Gate pole sensitive triggering unidirectional thyristor chip and preparation method thereof

A unidirectional thyristor and gate technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of device inability to conduct, increased gate sensitivity, large discreteness, etc., and achieve controllable Good quality and consistency, improved product qualification rate, and high processing reliability

Active Publication Date: 2009-11-25
JIANGSU JIEJIE MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, when the gate sensitive trigger one-way thyristor chip is in use, I GT Large discreteness, unable to meet customer requirements
The impact of the use environment and the power consumption of the device itself will cause the temperature of the device case to rise, the gate sensitivity will increase with the temperature, and the trigger current I GT becomes smaller, causing false triggering
Similarly, at low temperature, the case temperature of the device drops, the gate sensitivity decreases with temperature, and the trigger current I GT become larger, causing the device to fail to conduct at the rated current of the circuit design

Method used

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  • Gate pole sensitive triggering unidirectional thyristor chip and preparation method thereof
  • Gate pole sensitive triggering unidirectional thyristor chip and preparation method thereof
  • Gate pole sensitive triggering unidirectional thyristor chip and preparation method thereof

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Embodiment Construction

[0027] Such as Figures 1 to 3 As shown, the gate-sensitive trigger unidirectional thyristor chip of the present invention includes an N+ emitter region 101, a cathode electrode K201, a gate electrode G202, a P-type connection hole 203, a trench 501, a pair isolation diffusion region 601 and a P-type short In the base region 602, a surface thin film resistance strip 401 is connected between the P-type connection hole 203 and the N+ emitter region 101, and one end of the surface thin film resistance strip 401 is connected to the cathode electrode K201 through a metal ohmic contact and forms an ohmic contact point 301, The other end is connected to the P-type lead hole 203 through a metal ohmic contact and forms an ohmic contact point 301 . The surface thin film resistance strip 401 is made of doped polysilicon film, the resistance of the surface thin film resistance strip 401 is inversely proportional to the temperature, and the resistance value is 10-80KΩ.

[0028] A method f...

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Abstract

The invention relates to gate pole sensitive triggering unidirectional thyristor chip and preparation method thereof. In the gate pole sensitive triggering unidirectional thyristor chip, a surface thin film resistor stripe is connected between a P type connection hole and an N+ emitting region. The preparation method of the gate pole sensitive triggering unidirectional thyristor chip adds steps of LPCVD polysilicon thin film deposition, ion injection polysilicon doping, photoetching thin film resistor stripe, LPCVD oxide layer protection and ion injection doping and annealing between the step of diffusing the N+ emitting region and the step of photoetching groove window. Advantages of the invention lie in: a resistor is added between the gate pole electrode G and cathode electrode K of the thyristor, which may save a resistor during use and reduces influence of temperature to product electrical parameters. The invention can be used in a scale of temperature at -40 DEG C to 110 DEG C. Controllability and consistency of triggering current are great. Scale of I[GT] among batches can be controlled within 20 microamperes. The invention has strong capacity of resisting disturbance and gate pole sensitivity.

Description

technical field [0001] The invention relates to a chip, in particular to a gate sensitive trigger one-way thyristor chip and a manufacturing method thereof. Background technique [0002] At present, when the gate sensitive trigger one-way thyristor chip is in use, I GT Dispersion is large, unable to meet customer requirements. The impact of the use environment and the power consumption of the device itself will cause the temperature of the device case to rise, the gate sensitivity will increase with the temperature, and the trigger current I GT becomes smaller, causing false triggers. Similarly, at low temperature, the case temperature of the device drops, the gate sensitivity decreases with temperature, and the trigger current I GT becomes larger, causing the device to fail to conduct at the rated current of the circuit design. Contents of the invention [0003] The object of the present invention is to provide a gate sensitive trigger one-way thyristor chip. [0004...

Claims

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Application Information

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IPC IPC(8): H01L27/06H01L29/744H01L21/82H01L21/205H01L21/265H01L21/306
Inventor 颜呈祥王成森黎重林薛治祥黄健
Owner JIANGSU JIEJIE MICROELECTRONICS
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