Single crystal germanium manganese magnetic semiconductor/germanium magnetic heterodiode and preparation method thereof

Abstract

The invention relates to a single crystal germanium manganese magnetic semiconductor / germanium magnetic heterodiode and a preparation method thereof, which belong to the technical field of spinning electronic devices of an information technology. A p-type layer of the heterodiode is a single Ge1-xMnx ferromagnetic semiconductor, the mol percentage content x of manganese is more than 0 and is less than 15 percent; a Ge layer is a commercial intrinsic single crystal semiconductor Ge or an n-type single crystal semiconductor Ge doped with trace Sb, rectification characteristic under room temperature is adjusted and controlled by using a magnetic field, a magnetic resistor has an extreme value near Curie temperature of the Ge1-xMnx, and the preparation process is matched with the preparation process of a silicon semiconductor. The single crystal germanium manganese magnetic semiconductor / germanium magnetic heterodiode is prepared in such a way that molecular-beam epitaxy epitaxially grows a germanium manganese magnetic semiconductor on a single germanium substrate. Meanwhile, the single crystal germanium manganese magnetic semiconductor / germanium magnetic heterodiode prepared by the method can be better matched with the process of the modern silicon semiconductor, thereby having better application prospect on the aspect of the spinning electronic devices.

Description

technical field [0001] The invention relates to a single-crystal germanium-manganese magnetic semiconductor / germanium magnetic heterojunction diode and a preparation method thereof, belonging to the technical field of information technology spintronic devices. Background technique [0002] Modern electronic science and technology have greatly changed people's work and lifestyle, and unparalleledly promoted the development of human civilization. One of the greatest achievements in the 20th century is microelectronics and its applications. But now that the semiconductor silicon (Si) process has been developed to the nanometer scale, unprecedented challenges have been encountered in further increasing the computing speed and reducing power consumption. Magnetic semiconductors based on silicon semiconductor materials that have been widely used have always been people's first choice, but silicon is easy to form compounds with transition group elements. After a lot of research and...

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Problems solved by technology

However, apart from our work, so far there is no single-crystal Ge-Mn magnetic semiconductor / Ge magnetic heterojunction diode whose rectification characteristics can be tuned with a magnetic field.

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