Thin film production method

Abstract

The invention relates to a thin film production method comprising the following steps: providing an original substrate; forming a etching ceasing thin film on the original substrate; forming a sacrificial layer on the etching ceasing thin film; embedding gas ion to form an ion distribution concentration peak layer and define an effective transferring thin film and a residual layer; and separating the effective transferring thin film and the residual layer. The thickness of the effective transferring thin film can be effectively controlled by controlling the thickness of the sacrificial layer. In addition, the thickness of the effective transferring thin film is even and reaches the nanoscale thickness.

Description

technical field [0001] The invention relates to a thin film manufacturing method, in particular to a manufacturing method for synthesizing a thin film on a substrate. Background technique [0002] Silicon On Insulator (Silicon On Insulator, SOI) is mainly to set an insulating layer under the silicon wafer to avoid electrical effects and reduce power consumption to reduce current loss. In addition, Silicon On Insulator can also speed up the integrated circuit (Integrated Circuit , IC) processing speed. Silicon insulators can be used in devices that require low power consumption, such as mobile phones, watches, etc. In order to fully utilize the characteristics of high-speed operation of silicon insulators, they are also actively developing for high-frequency integrated circuits. [0003] There are also various manufacturing methods for silicon crystal insulators, which will be described as follows. In 1988, Dr. W. Maszara in the United States used an etch stop layer (Etch S...

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Problems solved by technology

[0010] Afterwards, the surface of the target substrate is etched, and the excess silicon on the etch stop layer is removed, so that the ultra-thin single crystal silicon layer and the etch stop layer remain on the target substrate, and are reused to manufacture bonded back-etched silicon crystals. Insulator method to produce ultra-thin silicon insulator wafers, but still has the disadvantage of uneven film thickness

[0011] Based on the above, it is not easy to produce shallow implants with good ion distribution due to the light weight of hydrogen ions in the production of silicon insulators by the smart cutting method, which makes it difficult for the thickness of the transferred film to reach the nanometer level.

In addition, the film thickness of the transferred film needs further thinning steps to reach the nano-scale film thickness, so the accuracy and uniformity of the film thickness will be greatly reduced

And because the crystal lattice matching degree between the etch stop layer and the film will affect the quality of the film, it will also cause the problem of product yield decline

[0012] This shows that above-mentioned existing film manufacturing method obviously still has inconvenience and defect in method and use, and urgently needs to be further improved

In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and the general method has no suitable method to solve the above-mentioned problems. This is obviously related. The problem that the industry is eager to solve

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