Plane space power distribution/synthesis magnifier

A plane space, amplifier technology, applied in waveguide-type devices, electrical components, connecting devices, etc., can solve the problem of increasing the characteristic impedance difference between the input microstrip line and the ultra-wide microstrip line, and not having enough space to place the amplifier chip bias Components, signal channel distance and other problems, to achieve the effect of simple structure, high output power, high power output

Inactive Publication Date: 2010-03-03
SOUTH CHINA UNIV OF TECH
View PDF2 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the number of amplifying units increases, the line width of the ultra-wide microstrip line will increase, which will easily stimulate the propagation of high-order mode waves; and when the number of amplifying units increases, the characteristic impedance of the ultra-wide microstrip line will increase. It decreases accordingly, which increases the difference in characteristic impedance between the input microstrip line and the ultra-wide microstrip line, which is not conducive to the matching between them
Also, the distance between the individual signal paths is too small to allow enough room for the amplifier chip and its biasing components

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plane space power distribution/synthesis magnifier
  • Plane space power distribution/synthesis magnifier
  • Plane space power distribution/synthesis magnifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] This embodiment is a planar spatial power distribution / synthesis amplifier realized by a single-layer substrate, such as Figure 4a , Figure 4b As shown, it includes a substrate 611, and a group of power distribution / combiners arranged on the plane of the substrate 611; wherein, the power distribution / combiner includes a microstrip step-down impedance converter 603, a microstrip power distribution device, 4 amplifiers 610, microstrip power combiner and microstrip gradually rising impedance converter 612, microstrip power divider, 4 amplifiers 610, and microstrip power combiner together form a chained power distribution / amplification / synthesis network 605 . The input end of the microstrip power divider is connected to the microstrip step-down impedance converter 603, and the output end is provided with 4 steps: the first step 604, the second step 606, the third step 607 and the fourth step 608, each step An output terminal is drawn out from the ladder, and the microst...

Embodiment 2

[0034] This embodiment is a planar spatial power distribution / synthesis amplifier realized by a double-layer substrate, such as Figure 5a , Figure 5b As shown, it includes a substrate 714, and two groups of power dividers / combiners respectively arranged on two opposite planes of the substrate 714. The structure of each group of power distribution / combiners is the same as that in Embodiment 1, and also includes a microstrip step-down impedance converter 703, a microstrip power divider, 4 amplifiers 710, a microstrip power combiner and a microstrip connected in sequence. The step-up impedance converter 715 and the four steps provided on the output end of the microstrip power divider are the first step 704 , the second step 706 , the third step 707 and the fourth step 708 . The microstrip power divider, the four amplifiers 710 and the microstrip power combiner together form a chained power distribution / amplification / combination network 705 . Through the 90-degree arc-shaped m...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a plane space power distribution / synthesis magnifier which comprises a substrate and at least one group of power distribution / synthesis devices, wherein the power distribution / synthesis devices are arranged on the plane of the substrate, a plurality of levels of steps are arranged on the output ends of microstrip power distributors of the power distribution / synthesis devices, one output terminal is introduced on each level of steps and is connected with the microstrip line of the magnifier by an arc-shaped microstrip line of 90 degrees, a plurality of levels of steps are arranged on the input end of a microstrip power synthesis device, and one input terminal is introduced on each level of steps and is connected with the microstrip line of the magnifier by the arc-shaped microstrip line of 90 degrees. The invention has simple structure and easy processing and is beneficial for integrating with other components and parts in a circuit. The magnifier is placed at the side edge of a main signal channel by introducing the arc-shaped microstrip line of 90 degrees, a chain type structure is formed, a distance between signal channels can be adjusted according to actual conditions, and a sufficient space is provided for placing a magnifier chip and other bias elements.

Description

technical field [0001] The invention relates to microwave and millimeter wave power amplifiers, in particular to planar space power distribution / synthesis amplifiers. Background technique [0002] At present, in microwave and millimeter wave power amplifiers, amplifiers based on electron tubes can obtain high enough power output, but their disadvantages such as expensive, bulky, and high-voltage power supply limit their applications. The solid-state power amplifier based on semiconductor devices is cheap, highly reliable, small in size, light in weight, and does not require high-voltage power supply; but its power handling capacity is limited, and the output power in the millimeter wave band generally does not exceed 10 Watts, lower output power at higher frequencies. By combining the output power of multiple solid-state devices through a power distribution / combination circuit, the output power of the solid-state power amplifier can be increased to meet the requirements for...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01P5/12
Inventor 褚庆昕严君美
Owner SOUTH CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products