Single-mode quantum cascaded laser linear array structure

A quantum cascade and line array technology, which is applied to lasers, laser devices, phonon exciters, etc., can solve the problems of complex process, short cavity length single-mode quantum cascade laser with large loss and low output power

Inactive Publication Date: 2010-03-03
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0004] At present, quantum cascade lasers that realize dynamic single-mode operation are mainly distributed feedback quantum cascade lasers. During the production process, gratings must be prepared and secondary epitaxial growth is performed, and the process is very complicated.
For F-P cavity lasers, the longitudinal film spacing (where λ 0 is the lasing wavelength of the laser, n e is the effective refractive index, L is the cavity len

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  • Single-mode quantum cascaded laser linear array structure
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  • Single-mode quantum cascaded laser linear array structure

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Embodiment Construction

[0025] see figure 1 Shown, the present invention is a kind of single-mode quantum cascade laser line array structure, and this structure comprises:

[0026] A substrate 1, the substrate 1 is an n-type indium phosphide material;

[0027] A plurality of ridge units 2, the ridge unit 2 is a light emitting area of ​​a line array, the width of each ridge unit 2 is 10-50 μm, the period S of the ridge unit 2 is 250 μm, and the plurality of ridge units 2. Manufactured longitudinally on the substrate 1 in sequence to form a ridge structure column, the length L of the ridge structure column is less than 150 μm, and the number of ridge units 2 in the plurality of ridge structure columns is 2-40, the number of Each ridge unit 2 in each ridge structure column is composed of InGaAs, InAlAs and InP quantum cascade structures epitaxially grown on the substrate 1;

[0028] InGaAs, InAlAs and InP quantum cascade structures refer to figure 2 , figure 2 a is a schematic diagram of the overa...

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Abstract

A single-mode quantum cascaded laser linear array structure is characterized in that: the structure comprises a substrate, a plurality of crestiform units, an isolation layer, an upper ohmic contact layer and a lower ohmic contact layer. The plurality of crestiform units are sequentially arranged on the substrate longitudinally to form a crestiform structure column; the isolation layer is arrangedon the surfaces of the plurality of crestiform units and the substrate, and is disconnected on the upper surfaces of the plurality of crestiform units to form an electrical injection window; the upper ohmic contact layer is arranged on the isolation layer and the electrical injection window; and the lower ohmic contact layer is arranged on the lower surface of the substrate.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a single-mode quantum cascade laser line array structure. Background technique [0002] The 3-5 micron and 8-14 micron bands are very important atmospheric windows, which cover the NO 2 , CO 2 , CO and other gas characteristic peaks. These spectral features can be applied to air pollution monitoring, industrial dust analysis, chemical process monitoring, trace gas monitoring, molecular spectroscopy research, medical diagnosis, anti-jamming radar, and infrared optical wireless communication. The emission wavelength of the quantum cascade laser is located in the mid-to-far infrared band, covering these two atmospheric windows. It is the perfect product of the combination of energy band engineering design and molecular beam epitaxy technology. [0003] A quantum cascade laser is a unipolar semiconductor light source based on electronic transitions between subbands in the s...

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Application Information

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IPC IPC(8): H01S5/40H01S5/22H01S5/343
Inventor 高瑜刘峰奇刘俊岐王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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