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Process for forming a ferroelectric film, ferroelectric film, ferroelectric device, and liquid discharge apparatus

A ferroelectric and film-forming technology, which is applied in the field of liquid discharge devices to form ferroelectric films, can solve the problems of Pb, ferroelectricity deterioration, technical impracticality, etc., and achieve the suppression of ferroelectricity reduction, ferroelectricity performance improvement and good ferroelectricity

Inactive Publication Date: 2010-03-10
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, techniques for lamination of repeated films are not practical
Also, with sol-gel technology, Pb deficiency is prone to occur
In the case of Pb deficiency, there is a tendency for ferroelectricity to deteriorate

Method used

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  • Process for forming a ferroelectric film, ferroelectric film, ferroelectric device, and liquid discharge apparatus
  • Process for forming a ferroelectric film, ferroelectric film, ferroelectric device, and liquid discharge apparatus
  • Process for forming a ferroelectric film, ferroelectric film, ferroelectric device, and liquid discharge apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0177] As a substrate for film formation, an electrode-mounted substrate in which a 30-nm-thick Ti close-contact layer and a 300-nm-thick Ir lower electrode were superimposed in this order on a 25-mm-square Si substrate was prepared.

[0178] For the electrode-mounted substrate prepared in this way, by using the RF sputtering device at a vacuum of 0.5 Pa and in Ar / O 2 Mixed atmosphere (O 2 Film formation was performed under the conditions in (volume fraction: 2.5%). The target composition was set to various compositions, thereby forming each of a plurality of Bi-doped PZT ferroelectric films having different Bi doping concentrations. In each target composition, the Zr:Ti molar ratio was set to Zr:Ti=52:48.

[0179] The substrate-target separation distance was set at 60 mm. The film formation temperature Ts was set at 525°C. At 2.5W / cm 2 Film formation is performed with RF electric power applied to the target. The film thickness of the ferroelectric film was set to 4 μm. ...

Embodiment 2

[0207] The film formation of the real PZT film and the Nb-PZT film was performed in the same manner as in Example 1, except that the specific film formation conditions were changed. For each of the true PZT film and the Nb-PZT film formed, a ferroelectric device was obtained. For the film formation of real PZT films, use the composition consisting of Pb 1.3 Zr 0.52 Ti 0.48 o 3 represents the target. For the film formation of Nb-PZT film, use the composition consisting of Pb 1.3 Zr 0.43 Ti 0.44 Nb 0.13 o 3 represents the target.

[0208] The film formation temperature Ts was set at 525°C. 2.5W / cm 2 The RF electrical power is applied to the target. Film formation was performed under the conditions of the substrate-target spacing distance D of D (mm) = 40 mm, 60 mm, 75 mm, 100 mm and 120 mm. The Nb-PZT film was formed under the condition of the substrate-target separation distance D of D (mm) = 60 mm, while the PZT film was formed under the condition of other values ...

Embodiment 3

[0215] The film formation temperature Ts was set to Ts=420° C., the substrate-target separation distance D was set to D (mm)=60 mm, and other conditions were set to be the same as in Example 2. In this way a PZT film is formed.

[0216] Under the above conditions, perovskite crystals with (100) orientation and good crystal orientation properties were obtained. (Perovskite crystals contain a small amount of pyrochlore phase).

[0217] (Summary of the results of Examples 2 and 3)

[0218] Figure 14 is a graph showing the results of XRD measurements performed on all samples of Examples 2 and 3 and other samples formed under different conditions, in which the film formation temperature Ts is plotted on the horizontal axis, and in which the substrate-target separation distance D plotted on the vertical axis.

[0219] Figure 14 Note that, for the PZT film or the Nb-PZT film, after adjusting the film-forming conditions within such a range as to satisfy the formulas (1) and (2)...

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Abstract

Such that at least 5 mol% of donor ions may be doped at an A site, a ferroelectric film (40) containing a perovskite type oxide of Formula (P) is formed on a substrate (20, B), which stands facing a target (T) having a predetermined composition, by a sputtering technique under conditions satisfying Formulas (1) and (2), or (3) and (4): [Pb(1-x+delta)Mx] [Zry Ti(1-y) Oz] (P) wherein M represents atleast one kind of element selected from Bi and lanthanide elements, 0.05 x 0.4, and 0 < y 0.7, the standard composition being such that Delta=0, and z=3, 400<=Ts ( DEG C)<=500 (1) 30<D (mm)<=80(2), 500<=Ts ( DEG C)<=600 (3) 30<=D (mm)<=100 (4), wherein Ts ( DEG C) represents the film formation temperature, and D (mm) represents the spacing distance between the substrate and the target.

Description

technical field [0001] The present invention relates to a method for forming a ferroelectric film containing a PZT-based perovskite-type oxide. The present invention also relates to a ferroelectric film obtained by the method for forming a ferroelectric film. The present invention also relates to a ferroelectric device including the ferroelectric film, and a liquid discharge device using the ferroelectric device. Background technique [0002] Heretofore, a piezoelectric device configured with a piezoelectric body and electrodes for applying an electric field across the piezoelectric body has been used for applications such as an actuator mounted on an inkjet type recording head, the The piezoelectric body has piezoelectric properties such that the piezoelectric body expands and contracts according to the increase and decrease of an applied electric field across the piezoelectric body. As a piezoelectric body material, perovskite-type oxides such as lead zirconate titanate ...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/34B41J2/14H01L41/22H01L41/09H01L41/18H01L21/316B41J2/045B41J2/055B41J2/135C01G25/00H01L41/187H01L41/316H01L41/39
CPCC04B2235/768B41J2/155C23C14/088C04B35/493C04B2235/76C04B2235/3251H01L41/0805H01L41/316C04B2235/3227C23C14/3407B41J2202/03C04B2235/3258H01L41/1876C04B2235/3298B41J2/14233H10N30/8554H10N30/076H10N30/704
Inventor 新川高见藤井隆满
Owner FUJIFILM CORP
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