Insulating film material, multilayer wiring substrate, and manufacturing method thereof, semiconductor device, and manufacturing method thereof
A multi-layer wiring and insulating film technology, which is applied in semiconductor/solid-state device manufacturing, multi-layer circuit manufacturing, semiconductor devices, etc., can solve problems such as insufficient strength, and achieve the effects of reducing parasitic capacitance and high-speed reliability
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Embodiment 1
[0214] -Preparation of insulating film material-
[0215] 10 g of polycarbosilane (“NIPSI-L”; weight-average molecular weight=approximately 400, manufactured by Nippon Carbon), 60 g (0.6 mol) of methyl isobutyl ketone, and 9 g (0.2 mol) of ethanol were added to the reaction vessel, At a constant temperature of 60°C, 60-61% by mass nitric acid water 10 (0.1 mol in water) was added dropwise with a dropping funnel at a rate of 2 mL / min, and after the addition was completed, a 7-hour aging reaction was carried out. Next, using a separatory funnel, the reactant was dissolved in diethyl ether, a large amount of water and sodium bicarbonate were added, and the mixture was washed with water until the pH value was 5 to remove excess nitric acid. After filtering to remove water for removing nitric acid, 200 mL of methyl isobutyl ketone was added, and diethyl ether was removed with a rotary evaporator until the reaction solution became 100 mL, thereby preparing an insulating film materia...
Embodiment 2
[0219] -Preparation of insulating film material and fabrication of insulating film-
[0220] In Example 1, 10 g of polycarbosilane having a weight-average molecular weight of about 400 was replaced with 10 g of polycarbosilane (“NIPSI-L”; manufactured by Nippon Carbon) having a weight-average molecular weight of about 2200. , and in the same manner as in Example 1, an insulating film material was prepared.
[0221] Furthermore, using the obtained insulating film material, it carried out similarly to Example 1, and produced the insulating film.
Embodiment 3
[0223] -Production of insulating film-
[0224] 0.001 mL of the insulating film material obtained in Example 2 was coated on the Si substrate by spin coating at a rotation rate of 2000 rpm and a coating time of 30 seconds so as to have a thickness of 200 nm. Next, the silicon substrate was dried with the solvent at 60° C. for 3 minutes to form an insulating film. In addition, after the above-mentioned solvent is dried, firing is not performed.
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