UMOS transistor capable of modulating on resistance
A technology of on-resistance and transistors, applied in the direction of semiconductor devices, circuits, electrical components, etc., to meet application requirements, reduce drain-source on-resistance, and improve mobility
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[0014] The present invention is described in more detail below in conjunction with accompanying drawing example:
[0015] refer to figure 2 , the modulated on-resistance UMOS transistor of the present invention. It includes a drain region 201 , a drift region 202 , a field oxide layer 203 , a polysilicon plate 204 connected to a gate electrode 208 , a channel region 205 , a source electrode 206 , a gate oxide layer 207 , and a gate electrode 208 . The electrodes of the field plates are shorted to the gate electrodes of the UMOS transistors. According to the requirements of the specific conduction characteristics and breakdown characteristics of the device, determine figure 2 The doping concentration and two-dimensional size of the drift region 202, and the two-dimensional size of the field oxide layer 203.
[0016] When the device of the present invention is turned off in the reverse direction, the side oxygen modulation structure modulates the electric field distribution...
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