Rare earth doped bismuth titanate up-conversion luminescence ferroelectric film and preparation method thereof

A technology of rare earth doping and ferroelectric thin films, which is applied in the field of functional thin film materials, can solve the problems of neglecting the luminescence performance of rare earth doped bismuth titanate ferroelectric thin films, achieve excellent chemical stability and thermal stability, convenient operation, and control Effect of Film Components

Inactive Publication Date: 2010-06-02
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The Luminescent Properties of Rare Earth Doped Bis

Method used

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  • Rare earth doped bismuth titanate up-conversion luminescence ferroelectric film and preparation method thereof
  • Rare earth doped bismuth titanate up-conversion luminescence ferroelectric film and preparation method thereof
  • Rare earth doped bismuth titanate up-conversion luminescence ferroelectric film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0030] Example 1 On a quartz glass substrate (Bi 3.95 Er 0.05 )Ti 3 O 12 Film preparation

[0031] On the quartz glass substrate of this embodiment (Bi 3.95 Er 0.05 )Ti 3 O 12 The preparation steps of the film are as follows:

[0032] (1) Dissolve 3.832g of bismuth nitrate containing five crystal waters and 0.039g of erbium nitrate containing five crystal waters in a mixture of glacial acetic acid and ethylene glycol methyl ether (V Ethylene glycol monomethyl ether : V glacial acetic acid =2:1), stir and heat to 50°C and keep it for 15min, then cool to room temperature, then add 1.12mL acetylacetone and 1.857g tetrabutyl titanate, continue stirring for 2 hours, obtain stable and clear rare earth doped titanium Bismuth acid precursor solution with a concentration of 0.06mol / L;

[0033] (2) Spin-coating the prepared rare earth-doped bismuth titanate precursor solution on a transparent quartz glass substrate at a spinning speed of about 3000 revolutions per minute for 30 seconds; each ...

Example Embodiment

[0036] Example 2 On a quartz glass substrate (Bi 3.65 Er 0.05 Yb 0.3 )Ti 3 O 12 Film preparation

[0037] The preparation process of this embodiment is the same as that of embodiment 1, but in addition to the same amount of erbium nitrate, 0.245g of ytterbium nitrate containing five crystal waters is used for rare earth nitrate, and the amount of bismuth nitrate pentahydrate added is adjusted to 3.541 g.

[0038] Using 980nm infrared light to excite the obtained (Bi 3.65 Er 0.05 Yb 0.3 )Ti 3 O 12 Thin film, the up-conversion emission spectrum is as figure 2 Shown. figure 2 Shows that this up-conversion luminous efficiency is in Er 3+ And Yb 3+ Obviously enhanced when co-blended.

Example Embodiment

[0039] Example 3 ITO substrate (Bi 3.65 Er 0.05 Yb 0.3 )Ti 3 O 12 Film preparation

[0040] The (Bi 3.65 Er 0.05 Yb 0.3 )Ti 3 O 12 The preparation method of the film includes the following steps:

[0041] (1) Prepare the rare earth-doped bismuth titanate precursor solution according to the method of step (1) in Example 2;

[0042] (2) According to the method of step (2) in embodiment 1, the difference is only that the precursor solution is spin-coated on the transparent ITO conductive glass substrate instead of the quartz glass substrate;

[0043] (3) According to the method of step (3) in Example 1, except that the heat treatment temperature is 650° C., the rare earth-doped bismuth titanate upconversion light-emitting ferroelectric thin film of this example is prepared.

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Abstract

The invention discloses a rare earth doped bismuth titanate up-conversion luminescence ferroelectric film and a preparation method thereof. The rare earth doped bismuth titanate up-conversion luminescence ferroelectric film has the molecular formula of (Bi4-x-yErxYby)Ti3O12, wherein 0<x<=0.85, 0<y<=0.85, and 0<x+y<=0.85. The invention adopts a chemical solution-deposition method to prepare (Bi4-x-yErxYby)Ti3O12 films, the film components are easily controlled, the operation is convenient, and the invention is convenient for scale production. Besides good ferroelectric, dielectric and optical transmittance properties, the (Bi4-x-yErxYby)Ti3O12 film further has efficiently enhanced up-conversion luminescence property, is a novel important multifunctional film material, and has wide application prospect in the field of photoelectric material.

Description

technical field [0001] The invention relates to the field of functional thin film materials, in particular to a rare earth doped bismuth titanate ferroelectric thin film, in particular to a rare earth doped bismuth titanate up-conversion luminescent ferroelectric thin film and a preparation method thereof. Background technique [0002] Rare earth doped bismuth titanate ferroelectric [(Bi 4-x ln x ) Ti 3 o 12 ]Thin film materials have excellent ferroelectric, piezoelectric, dielectric, pyroelectric and electro-optic properties, and have potential application value in the fields of microelectronics, optoelectronics and integrated optics. With the development of thin film preparation technology and semiconductor integration process technology Development, this multifunctional film material will play an important role. [0003] The luminescent properties of rare earth-doped bismuth titanate ferroelectric thin films are often neglected. The rare earth ion Er as the luminesce...

Claims

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Application Information

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IPC IPC(8): C03C17/25C04B41/50
Inventor 包定华高锋
Owner SUN YAT SEN UNIV
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