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Rare earth doped bismuth titanate up-conversion luminescence ferroelectric film and preparation method thereof

A technology of rare earth doping and ferroelectric thin films, which is applied in the field of functional thin film materials, can solve the problems of neglecting the luminescence performance of rare earth doped bismuth titanate ferroelectric thin films, achieve excellent chemical stability and thermal stability, convenient operation, and control Effect of Film Components

Inactive Publication Date: 2010-06-02
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The Luminescent Properties of Rare Earth Doped Bismuth Titanate Ferroelectric Thin Films Are Often Neglected

Method used

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  • Rare earth doped bismuth titanate up-conversion luminescence ferroelectric film and preparation method thereof
  • Rare earth doped bismuth titanate up-conversion luminescence ferroelectric film and preparation method thereof
  • Rare earth doped bismuth titanate up-conversion luminescence ferroelectric film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] On the quartz glass substrate of embodiment 1 (Bi 3.95 Er 0.05 ) Ti 3 o 12 Film preparation

[0031] On the quartz glass substrate of the present embodiment (Bi 3.95 Er 0.05 ) Ti 3 o 12 Film, its preparation steps are as follows:

[0032] (1) 3.832g bismuth nitrate containing five crystal waters, 0.039g erbium nitrate containing five crystal waters are dissolved in glacial acetic acid and ethylene glycol methyl ether mixed solution (V 乙二醇甲醚 :V 冰醋酸 = 2:1), stirring and heating to 50°C, and keeping it warm for 15 minutes, then cooling down to room temperature, adding 1.12mL acetylacetone and 1.857g tetrabutyl titanate, and continuing to stir for 2 hours to obtain stable and clear rare earth doped titanium Acid bismuth precursor solution, concentration is 0.06mol / L;

[0033] (2) Spin-coat the prepared rare earth-doped bismuth titanate precursor solution on a transparent quartz glass substrate at a speed of about 3000 rpm for 30 seconds; Place on a hot table at 300...

Embodiment 2

[0036] On the quartz glass substrate of embodiment 2 (Bi 3.65 Er 0.05 Yb 0.3 ) Ti 3 o 12 Film preparation

[0037] The preparation process of this embodiment is the same as that of Example 1, except that the rare earth nitrate uses 0.245 g of ytterbium nitrate containing five crystal waters in addition to the same amount of erbium nitrate, and the amount of bismuth nitrate pentahydrate added at the same time is adjusted to 3.541 g.

[0038] Adopt 980nm infrared light to excite the obtained (Bi 3.65 Er 0.05 Yb 0.3 ) Ti 3 o 12 Thin films with upconversion emission patterns such as figure 2 shown. figure 2 It is shown that this upconversion luminous efficiency in Er 3+ and Yb 3+ It was significantly enhanced when co-blended.

Embodiment 3I

[0039] On embodiment 3ITO substrate (Bi 3.65 Er 0.05 Yb 0.3 ) Ti 3 o 12 Film preparation

[0040] (Bi of this embodiment 3.65 Er 0.05 Yb 0.3 ) Ti 3 o 12 Thin film, its preparation method comprises the steps:

[0041] (1) Prepare rare earth-doped bismuth titanate precursor solution by the method of step (1) in Example 2;

[0042] (2) According to the method of step (2) in embodiment 1, the difference is only that the precursor solution is spin-coated on the transparent ITO conductive glass substrate instead of the quartz glass substrate;

[0043] (3) According to the method of step (3) in Example 1, the only difference is that the heat treatment temperature is 650° C., to prepare the rare earth-doped bismuth titanate up-conversion luminescent ferroelectric thin film of this example.

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Abstract

The invention discloses a rare earth doped bismuth titanate up-conversion luminescence ferroelectric film and a preparation method thereof. The rare earth doped bismuth titanate up-conversion luminescence ferroelectric film has the molecular formula of (Bi4-x-yErxYby)Ti3O12, wherein 0<x<=0.85, 0<y<=0.85, and 0<x+y<=0.85. The invention adopts a chemical solution-deposition method to prepare (Bi4-x-yErxYby)Ti3O12 films, the film components are easily controlled, the operation is convenient, and the invention is convenient for scale production. Besides good ferroelectric, dielectric and optical transmittance properties, the (Bi4-x-yErxYby)Ti3O12 film further has efficiently enhanced up-conversion luminescence property, is a novel important multifunctional film material, and has wide application prospect in the field of photoelectric material.

Description

technical field [0001] The invention relates to the field of functional thin film materials, in particular to a rare earth doped bismuth titanate ferroelectric thin film, in particular to a rare earth doped bismuth titanate up-conversion luminescent ferroelectric thin film and a preparation method thereof. Background technique [0002] Rare earth doped bismuth titanate ferroelectric [(Bi 4-x ln x ) Ti 3 o 12 ]Thin film materials have excellent ferroelectric, piezoelectric, dielectric, pyroelectric and electro-optic properties, and have potential application value in the fields of microelectronics, optoelectronics and integrated optics. With the development of thin film preparation technology and semiconductor integration process technology Development, this multifunctional film material will play an important role. [0003] The luminescent properties of rare earth-doped bismuth titanate ferroelectric thin films are often neglected. The rare earth ion Er as the luminesce...

Claims

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Application Information

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IPC IPC(8): C03C17/25C04B41/50
Inventor 包定华高锋
Owner SUN YAT SEN UNIV
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