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A molecular beam epitaxy growth method of Gaas-based inas1-xsbx/insb multi-quantum well films

A technology of inas1-xsbx, molecular beam epitaxy, applied in the direction of polycrystalline material growth, single crystal growth, crystal growth, etc. Low dislocation, smooth surface effect

Inactive Publication Date: 2011-11-30
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to solve the existing GaAs-based InAs 1-x Sb x InAs in / InSb multi-quantum well film 1-x Sb x There is a large lattice mismatch between the InSb film and the substrate GaAs, resulting in the heteroepitaxial growth of InAs on the GaAs substrate 1-x Sb x / InSb thin film surface roughness, low crystal quality and poor photoelectric performance, the invention provides a GaAs-based InAs 1-x Sb x / Molecular Beam Epitaxy Growth Method of InSb Multiple Quantum Well Thin Films

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  • A molecular beam epitaxy growth method of Gaas-based inas1-xsbx/insb multi-quantum well films
  • A molecular beam epitaxy growth method of Gaas-based inas1-xsbx/insb multi-quantum well films
  • A molecular beam epitaxy growth method of Gaas-based inas1-xsbx/insb multi-quantum well films

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specific Embodiment approach 1

[0014] Specific implementation mode 1: In this implementation mode, GaAs-based InAs 1-x Sb x The molecular beam epitaxy growth method of InSb multi-quantum well film is realized through the following steps: 1. Degassing and deoxidation film: Heating the GaAs substrate to 400°C, then keeping it warm and degassing for 50-90min, and then raising the temperature to 610°C ~630℃, then keep warm for 10~20min; 2. Growth of GaAs buffer layer: control GaAs substrate temperature to 580~600℃, Ga beam current to 6×10 -7 mbar, As beam current is 1.2×10 -5 mbar, the growth time is 18-22min; 3. Growth of low-temperature InSb buffer layer: control the GaAs substrate temperature to 300°C, control the growth rate of In to 200nm / h, In and Sb 4 The beam current ratio is 0.85:1, and the growth time is 8 to 12 minutes; 4. Growth of normal temperature InSb buffer layer: control the substrate temperature to 400°C, control the growth rate of In to 1μm / h, In and Sb 4 The beam current ratio is 1:2, an...

specific Embodiment approach 2

[0018] Embodiment 2: The difference between this embodiment and Embodiment 1 is that in Step 1, the GaAs substrate is first heated and degassed at 400° C. Under protection, heat up to a certain temperature (deoxidation film temperature), and keep warm at the deoxidation film temperature for 10 to 20 minutes. After the diffraction pattern of the high-energy electron diffractometer appears clear 2x4 reconstructed surface stripes, the oxidation will be removed. membrane. Other steps and parameters are the same as those in Embodiment 1.

[0019] In this embodiment, the temperature of the deoxidized film is different for different GaAs substrates; the temperature of the deoxidized film using a no-clean GaAs (001) substrate (provided by Zhongke Galling Semiconductor Co., Ltd.) is 610°C.

specific Embodiment approach 3

[0020] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that the temperature of the GaAs substrate in step 2 is controlled to be 30° C. lower than the temperature of the deoxidized film in step 1. Other steps and parameters are the same as those in Embodiment 1 or Embodiment 2.

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Abstract

The invention discloses a molecular beam epitaxial growth method of GaAs-based InAs1-xSbx / InSb multi-quantum well films, which relates to a growth method of GaAs-based multi-quantum well films. The invention solves the large lattice mismatch between the film and the substrate in the existing GaAs-based InAs1-xSbx / InSb multi-quantum well film, which leads to large surface roughness and crystallization of the InAs1-xSbx / InSb film grown on the substrate. Low quality and poor optoelectronic performance. The method of the present invention: GaAs, low-temperature InSb, normal-temperature InSb and InAs(1-x) / 2Sb(1+x) / 2 buffer layers, and multi-quantum well films are sequentially grown on the GaAs substrate from bottom to top by the intermittent growth method . The film roughness of the invention reaches 5.12nm; D-XRD has seven-level satellite peaks with a half-peak width of 225-248 seconds; the room temperature cut-off wavelength reaches 10 μm; and photoelectric detectors can be manufactured.

Description

technical field [0001] The invention relates to a growth method of a GaAs-based multi-quantum well film. Background technique [0002] InAsSb thin films and their multiple quantum wells have attracted more and more attention due to their excellent photoelectric properties, and have been research hotspots at home and abroad in the past two decades. InAsSb thin films and their multiple quantum wells have been used to make photodetectors, and their preparation methods include metal-organic vapor deposition and molecular beam epitaxy. In the application of photodetectors, the epitaxial growth of InAsSb / InSb multi-quantum well films on GaAs substrates is conducive to the monolithic integration of large-area InAsSb / InSb multi-quantum well detector arrays and GaAs-based signal readout and processing components. . However, there is a large lattice mismatch between the heteroepitaxial InAsSb film and the substrate GaAs. Due to the high density of dislocations at the interface cause...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/02C30B29/40C30B29/42
Inventor 刘晓明李美成熊敏李洪涛赵连城
Owner HARBIN INST OF TECH