Aluminum thickening process for metal pressure-welding block for bonding copper wire
A pressure soldering block and metal technology, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve problems such as aluminum layer penetration, craters, and affecting the electrical performance of small-sized chips, achieving strong operability, The effect of simple process
Active Publication Date: 2011-09-07
WUXI ZHONGWEI JINGYUAN ELECTRONIC CO LTD +1
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Problems solved by technology
[0013] For copper wire bonding, the manufacturing method of the above-mentioned chip solder block has obvious disadvantages: the thickness of the aluminum layer of 1 μm is too thin, and the copper wire welding is easy to break through the aluminum layer, causing craters, resulting in failure of the product's electrical performance and reliability problems. However, if a layer of 3 μm aluminum layer is directly sputtered, there will be problems such as insufficient glue thickness and poor control of strip width during the aluminum corrosion process, which will affect the electrical performance of small-sized chips
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[0043] The present invention will be further described below in conjunction with specific drawings and embodiments.
[0044] Figure A-1 to Figure A-6 Description of the numbered areas marked in: 1. Substrate silicon, with a thickness of about 625um; 2. Field oxide layer, with a thickness of 0.4μm; 3. BPSG layer, with a thickness of 0.8μm; 4. The aluminum layer formed by sputtering in the process, The thickness is about 1um; 5. Photoresist, the thickness is about
[0045]The metal pad thick aluminum process for copper wire bonding includes a substrate silicon 1, a field oxide layer 2 on the substrate silicon 1, and a BPSG layer 3 on the field oxide layer 2, the BPSG layer As an insulating layer; the process comprises the steps of:
[0046] Step 1, sputtering a first aluminum layer 4 with a thickness of 1 μm on the BPSG layer 3; in order to prevent electromigration, the first aluminum layer 4 contains a small amount of silicon and copper, and the sputtering temperature is 1...
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Abstract
The invention relates to a method for producing an integrated circuit, in particular to an aluminum thickening process for a metal pressure-welding block for bonding a copper wire. The process can solve the problem of thickening a metal in a pressure-welding block region required for bonding the copper wire in a chip bonding process. A second aluminum layer with the thickness of 2mum is sputteredon a passivation layer so that the integral thickness of a first aluminum layer and the second aluminum layer used as the metal welding block parts is 3mum and the requirement of the copper wire welding-pressing technology is met. The process saves the cost, conveniently realizes automation of the welding technology, can slow down the generation of metal compounds, improves the bonding strength, ensures the circuit specification of a small-sized chip, and is simple and convenient to operate.
Description
technical field [0001] The present invention relates to a production method of an integrated circuit, in particular to a metal pad thick aluminum process for copper wire bonding, and the present invention can solve the problem of copper wire bonding requirements in the chip bonding process Issues with thick metal in the pad area. Background technique [0002] After the chip is prepared, it needs to be assembled. The assembly includes two parts: chip assembly and device packaging. The former is to assemble the qualified chip on the base to form a good ohmic contact and heat dissipation path between the chip and the base, and then weld the metal leads on each solder block of the circuit and connect them to the outer leads of the corresponding electrodes (this process is called bonding). combined); the latter uses plastic or ceramic packaging to encapsulate the die. After the above processing, the device can work stably and reliably under various environmental and working con...
Claims
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IPC IPC(8): H01L21/60
CPCH01L2224/48624H01L24/45H01L2924/01082H01L2224/05124H01L2924/01079H01L2224/05624H01L2924/01005H01L2924/01033H01L2924/01006H01L2924/01029H01L2924/01014H01L2924/10253H01L2224/45144H01L2924/01013H01L2224/45147H01L2224/45H01L2924/00011H01L2924/00014H01L2924/01015H01L2924/14H01L2224/48824H01L2924/00H01L2924/00015H01L2924/00012H01L2224/43848
Inventor 戴昌梅李俊
Owner WUXI ZHONGWEI JINGYUAN ELECTRONIC CO LTD