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Substrate removal during LED formation

A technology for removing and growing substrates, applied to electrical components, electrical solid devices, circuits, etc., can solve the problems of reducing the operability of LED devices, low thermal conductivity properties, etc.

Active Publication Date: 2013-02-06
LUMILEDS HLDG BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The net effect of this thermal expansion mismatch is to introduce stress on the LED device, which limits or reduces the operability of the LED device under high power conditions
Finally, underfill materials have low thermal conductivity properties, which lead to unnecessarily high temperature operation of semiconductor devices

Method used

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  • Substrate removal during LED formation
  • Substrate removal during LED formation
  • Substrate removal during LED formation

Examples

Experimental program
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Effect test

Embodiment Construction

[0020] Figures 2A-2E is a simplified cross-sectional view of the process of mounting a GaN LED to a submount and removing the growth substrate according to one embodiment of the invention.

[0021] Figure 2A Illustrated is a portion of a wafer-scale LED structure 100 comprising a growth substrate 102, which may be, for example, sapphire, on which a thin GaN LED layer 104 has been formed. GaN LED layer 104 may conventionally be grown on a sapphire substrate, for example, as described in US Patent Publication No. 2007 / 0096130, incorporated herein by reference. image 3 Illustrated is a portion of a wafer structure 100 comprising a sapphire substrate 102 on which an n-type GaN layer 104n has been grown using conventional techniques. The GaN layer 104n may be a multilayer including clad layers. The GaN layer 104n may include Al, In, and n-type dopants. Active layer 104a is then grown on GaN layer 104n. The active layer 104n will typically be a plurality of GaN-based layers,...

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PUM

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Abstract

A light emitting diode (LED) is fabricated using an underfill layer that is deposited on either the LED or the submount prior to mounting the LED to a submount. The deposition of the underfill layer prior to mounting the LED to the submount provides for a more uniform and void free support, and increases underfill material options to permit improved thermal characteristics. The underfill layer may be used as support for the thin and brittle LED layers during the removal of the growth substrate prior to mounting the LED to the submount. Additionally, the underfill layer may be patterned to and / or polished back so that only the contact areas of the LED and / or submount are exposed. The patterns in the underfill may also be used as a guide to assist in the singulating of the devices.

Description

technical field [0001] The invention relates to the manufacture of light emitting diodes. Background technique [0002] Semiconductor light emitting diodes (LEDs) are among the most efficient light sources currently available. Material systems currently of interest in the fabrication of high brightness light emitting devices capable of operation across the visible spectrum include III-V semiconductors; eg binary, ternary and quaternary alloys of gallium, aluminum, indium, nitrogen, phosphorus and arsenic. III-V devices emit light across the visible spectrum. GaAs and GaP based devices are often used to emit light at longer wavelengths, such as yellow to red, while Ill-nitride devices are often used to emit light at shorter wavelengths, such as near ultraviolet to green. [0003] Since the crystal structure of sapphire is similar to that of gallium nitride, gallium nitride LEDs typically use transparent sapphire growth substrates. [0004] Some GaN LEDs are formed as flip ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/54H01L33/56
CPCH01L33/54H01L33/0079H01L33/56H01L2224/73204H01L2224/81001H01L2224/92125H01L24/97H01L2224/13H01L2924/12041H01L2224/05573H01L2224/05568H01L2924/00014H01L2224/16225H01L33/0093H01L2924/00H01L2224/05599H01L33/48
Inventor G·巴辛R·S·韦斯特P·S·马丁
Owner LUMILEDS HLDG BV
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