Method for manufacturing silicon solar cells

Abstract

The invention discloses a method for manufacturing silicon solar cells, comprising the following steps: carrying out N type or P type doping at the back of an N type silicon substrate to form an N type or P type doped layer and growing an SiO2 layer on the outer layer of the doped layer; printing a corrodent or corrosion preventive on the SiO2 layer at the back through printing technology, corroding needed graphics by the corrodent and exposing the N type silicon substrate; carrying out P type or N type doping on the exposed N type silicon substrate to form a P type or N type doped region; then corroding through holes on the SiO2 layer at the back for extracting electrodes; and corroding the front into textured structure and depositing an antireflection layer on the textured structure. In the method, the printing technology is adopted to print the corrodent or corrosion preventive to replace the photolithography technology in the prior art, thus lowering the production cost and greatly improving the production efficiency, and the method is suitable for scale production.

Description

technical field [0001] The invention relates to a manufacturing process of a solar cell, in particular to a manufacturing method of a silicon solar cell. Background technique [0002] Solar cells are mainly made on the basis of semiconductor materials. Its working principle is that photoelectric materials absorb light energy and then undergo photoelectron reactions to generate current. At present, silicon solar cells are widely used. [0003] The rear point contact solar cell is a silicon solar cell with high conversion efficiency of monocrystalline silicon. The positive and negative electrodes of the cell are located on the back of the cell. The electrode contact area is moved to the back surface, which avoids the influence of Auger recombination on the battery efficiency; the texture of the front surface and the reflection of the metal electrode on the back surface can form a good light trapping effect. [0004] In the prior art, in the preparation method of the back cont...

AI Technical Summary

Problems solved by technology

Photolithography technology can realize precise graphic structures, and is mostly used in the field of integrated circuits and liquid crystal panel manufacturing. The investment of lithography equipment is expensive and the production efficiency is low.

[0007] In the production process of silicon solar cells, the precision of the graphics is not high, and the formation of graphics by photolithography will lead to unnecessary increases in production costs and reduced production efficiency.

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