Zero drift compensation method of Hall magnetic sensor
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- HEILONGJIANG UNIV
- Publication Date
- 2010-07-07
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
Technical field:
[0001] The invention relates to a zero position compensation method for the MOSFET Hall magnetic sensor by adjusting the equivalent resistance of the conduction channel of the MOSFET Hall magnetic sensor through grid bias voltage. Background technique:
[0002] At present, when the known Hall magnetic sensor is applied with a magnetic field B=0, the Hall output voltage VH is not equal to zero due to factors such as geometric asymmetry of the Hall electrode, poor ohmic contact of the electrode, uneven resistivity, and uneven temperature, resulting in zero Bit Error VHO. In order to eliminate the zero error, an external compensation circuit is mainly used to compensate the zero drift. This method is not easy for the magnetic sensor to develop in the direction of miniaturization and intelligence. Invention content:
[0003] The purpose of the present invention is to provide a method for compensating the zero point drift that is affected by the performance of...