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Anti-reduction dielectric ceramic material matched with copper inner electrode and sintered under high frequency and low temperature

A low-temperature sintered ceramic and dielectric material technology, which is applied in the field of high-frequency low-temperature sintered ceramic dielectric materials, can solve the problems of affecting the electrical performance of MLCC and difficult matching of electrodes.

Active Publication Date: 2010-07-28
GUANGDONG FENGHUA ADVANCED TECH HLDG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, copper is easier to oxidize than nickel, and the melting point of copper (1083°C) is lower than that of nickel (1453°C). However, the sintering temperature of the current general-purpose ceramic material is very high, which is difficult to match with copper electrodes, thus affecting the electrical properties of MLCC.

Method used

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  • Anti-reduction dielectric ceramic material matched with copper inner electrode and sintered under high frequency and low temperature
  • Anti-reduction dielectric ceramic material matched with copper inner electrode and sintered under high frequency and low temperature
  • Anti-reduction dielectric ceramic material matched with copper inner electrode and sintered under high frequency and low temperature

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] An anti-reduction copper inner electrode high-frequency low-temperature sintered ceramic dielectric material, using raw materials with a purity of more than 99.5%, and using 0.8mol Mg(OH) 2 , 0.8mol SiO 2 , 0.2mol BaCO 3 and 0.2molZrO 2 The mixing ratio is uniform, and the mixture is calcined at 1150°C for 3 hours, and the main crystal phase is Mg 0.8 Ba 0.2 Si 0.8 Zr 0.2 o 3 Material. Then add the modifying additives and sintering aids shown in Table 1 in predetermined proportions.

[0012] Table 1: Formulation composition of main crystal phase, modifying additives, and sintering flux

[0013]

[0014] According to the production process of ceramic materials commonly used by those skilled in the art, ceramic dielectric ceramic materials are produced, and then organic binders and ethanol and other solvents are added according to the commonly used MLCC production process to form a slurry, and the slurry is cast into a film sheet , Print copper Cu internal ele...

Embodiment 2

[0019] A high-frequency low-temperature sintered ceramic dielectric material for an anti-reduction copper inner electrode, using raw materials with a purity of more than 99.5%, and using 0.9mol Mg(OH) 2 , 0.9mol SiO 2 , 0.1mol BaCO 3 and 0.1mol ZrO 2 The mixing ratio is uniform, and the mixture is calcined at a temperature of 1150 ° C for 3 hours, that is, the main crystal phase is Mg 0.9 Ba 0.1 Si0.9 Zr 0.1 o 3 Material. Then add modifying additives and sintering aids as shown in Table 3 in predetermined proportions.

[0020] Table 3: Formulation composition of main crystal phase, modifying additives, and sintering flux

[0021]

[0022] Manufacture and test the electrical performance of MLCC by the method for embodiment 1, test result is as shown in table 4:

[0023] Table 4: Performance parameters of MLCC products made according to the above ceramic dielectric materials

[0024]

[0025]

Embodiment 3

[0027] A high-frequency low-temperature sintered ceramic dielectric material for an anti-reduction copper inner electrode, using raw materials with a purity of more than 99.5%, and using 0.95mol Mg(OH) 2 , 0.95mol SiO 2 , 0.05mol BaCO 3 and 0.05molZrO 2 The mixing ratio is uniform, and the mixture is calcined at a temperature of 1150 ° C for 3 hours, that is, the main crystal phase is Mg 0.95 Ba 0.05 Si 0.95 Zr 0.05 o 3 Material. Then add modifying additives and sintering aids as shown in Table 5 in predetermined proportions.

[0028] Table 5: Formulation composition of main crystal phase, modifying additive, and sintering flux

[0029]

[0030]

[0031] Manufacture and test the electrical performance of MLCC by the method for embodiment 1, test result is as shown in table 6:

[0032] Table 6: Performance parameters of MLCC products made according to the above ceramic dielectric materials

[0033]

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Abstract

The invention discloses an anti-reduction dielectric ceramic material matched with a copper inner electrode and sintered under high frequency and low temperature. The dielectric ceramic material can be used for manufacturing multi-layer ceramic capacitors made of copper inner electrodes. The dielectric ceramic material comprises main crystal phase, modified additives and sintering fluxing agents,wherein the structure of the main crystal phase is MgxBa(1-x)ZrySi(1-y)O3, x is not less than 0.8 and not more than 0.95 and y is not less than 0.05 and not more than 0.2; the modified additive is one or more of MnO2, CaO, Li2O, Bi2O3 and TiO2; and the sintering fluxing agent is one or more of B2O3, SiO2, ZnO, CuO, K2O and BaO. The dielectric ceramic material meets the EIA standard, conforms to COG characteristic, has the characteristics of uniformity, uniform grain size distribution, high dispersibility and good forming process, conforms to the environment protection requirement and has excellent dielectric property.

Description

technical field [0001] The invention relates to a ceramic dielectric material and a preparation method of the obtained components, in particular to a high-frequency and low-temperature sintered ceramic dielectric material that conforms to COG characteristics and can match copper inner electrodes. Background technique [0002] With the market demand for high performance and low cost of products, manufacturers of ceramic capacitors are forced to continuously look for alternative materials that can reduce production costs and meet higher performance requirements, which is one of the major challenges manufacturers face. The current multilayer chip ceramic capacitors, hereinafter referred to as MLCCs, have basically realized the use of base metals. More than 80% of MLCCs use base metal internal electrode materials (mainly nickel) to replace palladium silver internal electrode materials, which can effectively reduce about 40 % of production costs. For further research, the use of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/16C04B35/622
CPCC04B2235/3418C04B2235/652C04B2235/3267C04B2235/3409C04B2235/3281C04B2235/3201C04B2235/3284C04B2235/3232C04B2235/3215C04B2235/3208C04B35/20C04B2235/3445C04B2235/3203C04B35/62685C04B2235/3298C04B2235/3244
Inventor 宋蓓蓓宋永生莫方策李娟王孝国郭精华
Owner GUANGDONG FENGHUA ADVANCED TECH HLDG
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