Plasma processing device and processing method thereof

Abstract

The invention relates to a plasma processing device, which comprises a vacuum processing cavity, an upper electrode and a lower electrode, a first radio frequency power source and an AC power source, wherein the vacuum processing cavity induces reaction gas; the upper electrode and the lower electrode are oppositely arranged at the inner side of the processing cavity; the lower electrode is provided with a base plate to be processed; the first radio frequency power source is connected with the lower electrode, is provided with a first frequency, and is used for forming the plasma of the reaction gas between the upper electrode and the lower electrode; the upper electrode comprises a plurality of subareas which are mutually and electrically insulated from each other; the AC power source is connected with at least one of the subareas on the upper electrode and is provided with a second frequency, wherein the second frequency is smaller than the first frequency. As the upper electrode is provided with a plurality of electrically-insulated subareas, the AC power source with changeable powder is applied onto some subareas, and a sheath layer, the depth of which is in proportion to the power, is formed under the upper electrode, the plasma processing device leads the more plasma to flow into the position of the thinner plasma sheath layer and increases the plasma density at the position, thereby being capable of stably adjusting the homogenization of the plasma in the processing cavity.

Description

technical field [0001] The invention relates to a plasma processing device and a processing method thereof, in particular to a plasma processing device capable of adjusting plasma uniformity and a processing method thereof. Background technique [0002] At present, in the manufacturing process of semiconductor devices, capacitively coupled plasma processing devices are usually used to generate gas plasma to react with semiconductor devices, so as to realize processing processes such as etching of semiconductor devices. [0003] Generally, in a capacitively coupled plasma processing device, an upper electrode and a lower electrode are arranged in parallel in a vacuum processing chamber, and a substrate to be etched is placed on the lower electrode. Introduce etching gas into the processing chamber, apply radio frequency on the upper electrode or the lower electrode, and ground the corresponding lower electrode or upper electrode, so that the electrons accelerated by the radio...

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Problems solved by technology

[0004] However, in the processing chamber of the plasma processing device, due to the different process parameters such as the type of etching gas, the gas pressure, and the power of the high-frequency voltage, the density of the generated plasma is very easy to change, and it is difficult to change the density around the substrate. Uniform distribution, affecting the uniformity of substrate etching

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