Power phase module based on IEGT

Abstract

The invention relates to a power unit phase module based on IEGT, comprising two IEGT devices; each IEGT device is connected with a freewheel diode in parallel, the two IEGT devices are connected in series, and the middle connecting end is lead out to be output terminal; and the phase module is provided with a buffer absorption circuit. The phase module is in the electric structure that the external is a closed box, an insulating separator divides the interior of the closed box into upper and lower spaces, and the IEGT unit and the diode unit are respectively arranged in the upper and lower spaces of the insulating separator to form a double-layer structure. The invention has the beneficial effects that: (1) power density is high; (2) serviceability is high; (3) installation and maintenance are convenient; (4) modular design can be convenient for free combination, thus being widely applied to multiple power electronic devices.

Description

technical field

[0001] The invention relates to a power phase module in the field of high-power electric electronic converter with IEGT as the core device. Background technique

[0002] IGBT (Insulated Gate Bipolar Transistor) is an insulated gate bipolar transistor, which is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), and has a MOSFET The advantages of high input impedance and low conduction voltage drop of GTR. The saturation voltage of GTR is low, the carrying current density is large, but the driving current is large; the driving power of MOSFET is small, the switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small. The IGBT combines the advantages of the above two devices, the driving power is small and the saturation voltage is reduced, and it is very suitable for use in converter systems such as high-vol...

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