Preparation method of selective emitting electrode crystal silicon solar battery
A technology for solar cells and crystalline silicon, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of complex process, low production efficiency and high cost, and achieve the effect of good repeatability and low cost
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[0025] The specific embodiment of the present invention is described in further detail below in conjunction with accompanying drawing:
[0026] The involved selective emitter crystalline silicon solar cell structure is as figure 1 Shown, where 1 is the silver grid line electrode, 2 is the aluminum back field, n in the figure + , n and p respectively form a horizontal n at the grid electrode + / n junction and a longitudinal n + / p junction, a p-n junction is formed outside the gate electrode.
[0027] The concrete steps of this embodiment are as follows:
[0028] 1. P-type crystalline silicon substrates (including monocrystalline silicon and polycrystalline silicon) are cleaned and textured, and placed in a diffusion furnace for conventional phosphorus atom diffusion. After diffusion, the surface sheet resistance of the silicon wafer is about 40Ω / □, A layer of phosphosilicate glass layer 3 containing phosphorus atoms grows on the surface of the silicon wafer, and the conce...
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