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Method of manufacturing surface treated member for semiconductor liquid crystal manufacturing apparatus

A manufacturing device and surface treatment technology, applied to semiconductor devices, surface reactive electrolytic coatings, furnace components, etc., can solve problems such as complex processing and inability to apply to complex shapes

Inactive Publication Date: 2013-06-05
KOBE STEEL LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method has problems in that the process for forming the oxide sprayed film is very complicated, expensive equipment is required, and it cannot be applied to complex shapes.

Method used

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  • Method of manufacturing surface treated member for semiconductor liquid crystal manufacturing apparatus
  • Method of manufacturing surface treated member for semiconductor liquid crystal manufacturing apparatus
  • Method of manufacturing surface treated member for semiconductor liquid crystal manufacturing apparatus

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Experimental program
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Effect test

Embodiment Construction

[0022] Hereinafter, the present invention will be described in more detail based on the embodiments.

[0023] The anodized film is formed by immersing a base material such as aluminum alloy in an electrolyte solution to become an anode, and passing an electric current to oxidize the surface of the base material such as aluminum alloy on the anode side, depending on the composition of the electrolyte solution, electrolysis temperature, and current density ( The properties of the anodized film formed by the difference in current value per unit area, that is, the hardness of the anodized film, the frequency of cracks, and the like are different.

[0024] At present, the anodic oxide film is mainly formed by electrolysis at low temperature and high current density using a sulfuric acid electrolyte. If an anodic oxide film is formed by this method, there is a contradiction that although an anodic oxide film with high hardness can be obtained, the other On the one hand, the frequenc...

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Abstract

A method of manufacturing a surface treated member used for semiconductor liquid crystal manufacturing apparatus, capable of forming an anodized film at a higher hardness than that of an anodizing film formed of an existent method, with no problem in view of the generation of cracks, and excellent in the balance between a high hardness and reduced cracks by a simple and convenient method by forming an anodized film to the surface of a member having an aluminum alloy or pure aluminum as a basic material, then dipping the same in pure water, and applying a hydrating treatment to the anodized film, wherein the hydrating treatment is conducted under the conditions satisfying that a treatment temperature is 80° C. to 100° C. and a treatment time (min)≧−1.5×treatment temperature (° C.)+270.

Description

technical field [0001] The present invention relates to a method of manufacturing a surface treatment member for a semiconductor liquid crystal manufacturing device using an aluminum alloy or pure aluminum as a base material. The surface treatment member for a semiconductor liquid crystal manufacturing device is preferably used in a dry etching device, a CVD device, Materials for vacuum chambers of semiconductor or liquid crystal manufacturing equipment such as ion implantation devices and sputtering devices, or members provided in the vacuum chambers. Background technique [0002] Conventionally, anodic oxidation treatment in which an anodized film is formed on the surface of a member having an aluminum alloy or pure aluminum as a base material and plasma resistance or gas corrosion resistance is imparted to the base material has been widely used. [0003] For example, aluminum alloys are generally used to form various members such as a vacuum chamber used in a plasma proce...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D11/24C25D11/18
CPCH01L29/4908C25D11/24C21B3/10F27D2099/0095
Inventor 和田浩司坪田隆之细川护久本淳
Owner KOBE STEEL LTD