TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and manufacture method thereof

Abstract

The invention relates to a TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and a manufacture method thereof. The manufacture method comprises the steps of: depositing a grid metal film, forming a grid line and a grid electrode pattern by using a composition process; depositing a grid insulation layer, a semiconductor film, a doped semiconductor film and a source / drain metal film, forming an active layer, a data line, a source electrode, a drain electrode and a TFT channel region pattern by adopting a halftone or gray tone mask template with a semipermeable membrane through a composition process, wherein the widths of the formed source electrode and the formed drain electrode are 2.8-3.0 mu m; depositing a passivation layer, and forming a passivation layer through hole pattern by using the composition process; and depositing a transparent conductive film, forming a pixel electrode pattern by using the composition process, and connecting the pixel electrode with the drain electrode through a passivation layer through hole. The widths of the source electrode and the drain electrode are greatly reduced by adopting the halftone or gray tone mask template with the semipermeable membrane, therefore, the invention improves the aperture opening rate, can increase the brightness and lower the brightness of a backlight board.

Description

technical field [0001] The invention relates to a thin film transistor liquid crystal display structure and a manufacturing method thereof, in particular to a TFT-LCD array substrate and a manufacturing method thereof. Background technique [0002] Thin Film Transistor Liquid Crystal Display (TFT-LCD for short) has the characteristics of small size, low power consumption, and no radiation, and occupies a dominant position in the current flat panel display market. At present, five or four patterning processes are mainly used to manufacture TFT-LCD array substrates in the prior art. The five patterning processes mainly include: patterning of gate lines and gate electrodes, patterning of active layers, patterning of source / drain electrodes, patterning of via holes and patterning of pixel electrodes. The four-step patterning process is based on the five-step patterning process, and uses the half-tone or gray-tone mask technology to combine the active layer patterning and the so...

AI Technical Summary

Problems solved by technology

The actual exposure analysis shows that when the ultraviolet light outside the opaque area enters the TFT channel area, the photoresist in the TFT channel area will be too thin, and because the ultraviolet rays entering the TFT channel area from the edge of the opaque area It is not parallel light, and it will also cause deformation of the photoresist in the TFT channel area

Too thin or deformed photoresist will lead to open circuit or short circuit in the TFT channel area during subsequent continuous etching of source and drain metal films and doped semiconductor films, resulting in a decrease in yield

At present, in order to overcome the poor open circuit or short circuit of the TFT channel area, the existing technology adopts the method of increasing the width of the source electrode and the width of the drain electrode, so that the ultraviolet rays outside the opaque area will not enter the TFT channel area, but this method increases The size of the thin film transistor is reduced, the effective light transmission area is reduced, and the aperture ratio is reduced

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