High-brightness AlGaInP-based light-emitting diode with introduced roughened layer and manufacturing method thereof

Abstract

The invention provides a high-brightness AlGaInP-based light-emitting diode with an introduced armoring layer and a manufacturing method thereof. On the basis of the conventional AlGaInP-based light-emitting diode, a roughened n-type AlGaInP-based epitaxial layer is introduced and combined into the structure of the conventional light-emitting diode through bonding and substrate removal; a first epitaxial wafer is the conventional AlGaInP-based light-emitting diode; a second epitaxial wafer is manufactured to provide a roughened epitaxial layer; in order to combine the roughened epitaxial layer onto the surface of a first bonding window layer of the first epitaxial wafer, a second bonding window layer is arranged between the roughened epitaxial layer and the first bonding window layer; andthe first bonding window layer and the second bonding window layer are combined to form bonding in a direct bonding mode under the conditions of high temperature and high pressure. In the method, then-type AlGaInP-based epitaxial layer roughened by a wet method is successfully applied to the conventional AlGaInP-based light-emitting diode, and light extraction efficiency is greatly improved; andcompared with the manufacturing process for an inverted AlGaInP-based light-emitting diode, the manufacturing process of the invention is simple and avoids the problem of bonding wire pits.

Description

technical field [0001] The invention relates to an aluminum gallium indium phosphorus-based light-emitting diode and a manufacturing method thereof, in particular to a high-brightness aluminum-gallium-steel-phosphorus-based light-emitting diode with an introduced roughening layer that can improve light extraction efficiency and a manufacturing method thereof. Background technique [0002] With the promotion of market demand and technological progress, red and yellow aluminum gallium indium phosphorus-based light-emitting diodes have been widely used in different fields such as display screens, indicator lights, digital products, and backlight sources. Due to the limitations of the material itself, the traditional AlGaInP-based light-emitting diodes have a bottleneck in the improvement of luminous efficiency, and have gradually been unable to meet the requirements of high-end applications. Therefore, it is urgent to greatly improve the luminous efficiency at the current techni...

AI Technical Summary

Problems solved by technology

For conventional AlGaInP-based light-emitting diodes, the surface is a p-type GaP bonding window layer. The chemical properties of GaP are relatively stable, and general chemical wet methods cannot be etched and roughened, while dry etching will cause Surface damage affects electrical properties, so the surface roughening process is difficult to apply to conventional AlGaInP-based light-emitting diodes

Compared with gallium phosphide, AlGaInP-based epitaxial materials are easier to be chemically wet etched, and more particularly, the n-type AlGaInP on the side of the growth substrate can be etched by a certain amount of wet etching. The excellent roughened morphology can greatly improve the light extraction efficiency, but it can only be applied to the junction of flip-chip AlGaInP-based light-emitting diodes based on substrate transfer. However, the manufacturing process of flip-chip AlGaInP-based light-emitting diodes Complex, and there are hidden dangers such as bonding wire pits and other hidden dangers after the light-emitting epitaxial layer is transferred through bonding

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