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Purification method for gas and purification device with same

A purification method and gas technology, applied in the direction of inert gas compounds, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of high cost of a large amount of gas, expensive adsorbent and adsorption tower

Active Publication Date: 2014-02-12
NIPPON SANSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] In addition, in the method described in the above-mentioned prior art document, since the adsorbent is expensive and the adsorption tower is large, the cost for purifying a large amount of gas also becomes high

Method used

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  • Purification method for gas and purification device with same
  • Purification method for gas and purification device with same
  • Purification method for gas and purification device with same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0077] A zeolite layer (MS5A) with a thickness of 100 mm, a nickel catalyst layer (N112) with a thickness of 100 mm, and an alumina layer with a thickness of 100 mm are formed from above in a stainless steel cylinder with an inner diameter of 100 mm to form an adsorption tower.

[0078] Each layer of this adsorption tower was regenerated under the following conditions.

[0079] First, nitrogen with a hydrogen concentration of 2 vol% is heated to 200° C. and flows at a flow rate of 3 standard cubic meters per hour for 3 hours. Next, the nitrogen gas is heated to 200° C. and flows for 3 hours at a flow rate of 3 standard cubic meters per hour. Allow to cool.

[0080] After that, nitrogen containing 1ppm of hydrogen, 1ppm of carbon monoxide, 0.5ppm of carbon dioxide, 1ppm of oxygen, and 2.6ppm of moisture is used as the gas to be purified, at a pressure of 100PaG, a temperature of 25°C, and a flow rate (superficial velocity) of 53 cm / s , Under the condition of a flow rate of 30 ...

Embodiment 2

[0083] A zeolite layer (MS5A) with a thickness of 100 mm, a nickel catalyst layer (N112) with a thickness of 100 mm, and an alumina layer with a thickness of 50 mm containing 5.8% by weight of sodium were formed from above in a stainless steel cylinder with an inner diameter of 100 mm, thereby Form an adsorption tower for use.

[0084] After the adsorption tower is regenerated under the same conditions as in Example 1, the purified gas with the same composition as in Example 1 is introduced under the same conditions.

[0085] Hydrogen gas was detected as the first breakthrough component when 24 hours had elapsed after the start of the introduction.

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Abstract

A purification method for the gas is disclosed which can remove a large amount of hydrogen, carbon monoxide, carbon dioxide, oxygen and water from the inert gas. Contact said inert gas with water adsorbent to remove the water, and rectify the flow of the inert gas, then contact the inert gas with nickel catalyst to remove the hydrogen, carbon monoxide and oxygen, furthermore, contact the inert gas with alumina to remove the carbon dioxide. Make the flow of the inert gas in a form of downstream and make the flow rate is above the flow speed of filling agent in theory.

Description

technical field [0001] The invention relates to a method and a purification device for purifying inert gas. Specifically, it relates to a method and a purification device for removing hydrogen, carbon monoxide, carbon dioxide, oxygen, and water contained in inert gases such as nitrogen and noble gases including argon used in semiconductor manufacturing and the like, and purifying the inert gases. [0002] this application claims priority based on Japanese Patent Application No. 2009-041033 for which it applied to Japan on February 24, 2009, and takes in the content here. Background technique [0003] A large amount of inert gases such as nitrogen and argon are used in the semiconductor manufacturing process. These inert gases are produced by cryogenic air separation plants. The inert gas produced by this separation device contains hydrogen, carbon monoxide, carbon dioxide, oxygen, water, etc. in the order of ppm to ppb as impurities. [0004] However, since the concentrat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B23/00C01B21/04
CPCY02C10/08Y02C20/40Y02P20/151
Inventor 足立贵义藤江和彦
Owner NIPPON SANSO CORP