Method for preparing suspended ZnO nanowire field effect transistor

Abstract

The invention discloses a method for preparing a suspended ZnO nanowire field effect transistor, which comprises: growing a layer of silicon dioxide medium on a p ++ type silicon substrate to form a field effect transistor substrate; coating a layer of photoresist on the field effect transistor substrate and exposing the photoresist; evaporating drain and source metals to form the source and drain of the suspended ZnO nanowire field effect transistor; evaporating metal on the back to form the grid of the suspended ZnO nanowire field effect transistor; depositing the ZnO nanowire on the field effect transistor substrate of which the drain and source metals are evaporated; and performing annealing treatment to complete the preparation of the suspended ZnO nanowire field effect transistor. The invention has the advantages of remarkable effect, simple and easy-to-implement process, economy, applicability and high reliability and is easy to promote and use in microwave and millimeter wave compound semiconductor element manufacturing.

Description

technical field The invention relates to the technical field of compound semiconductor devices, in particular to a method for preparing a suspended ZnO nanowire field effect transistor. Background technique One-dimensional nanomaterials are new materials that are nanoscale in the two-dimensional direction and macroscopic in length. As early as 1970, French scientists first developed carbon fibers with a diameter of 7nm. In the past decade, semiconductor quasi-one-dimensional nanowires have received extensive international attention due to their great application prospects in nanoelectronics and nano-optoelectronics. In 1991, Japan discovered carbon nanotubes with a high-resolution electron microscope, which promoted the research of the entire one-dimensional nanomaterial. In the past ten years, a variety of one-dimensional nanomaterials have been synthesized by various methods, such as nanotubes, nanorods, nanowires, semiconductor quantum wires, nanobelts, and nanowire arra...

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Problems solved by technology

Moreover, the transport mechanism of nanowires has not been well simulated, and the device structure cannot be optimized, so that it cannot effectively guide the device process

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