Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thick film thermistor slurry, preparation method thereof and thick film thermistor

A thick-film thermal and resistive paste technology, applied in conductive materials dispersed in non-conductive inorganic materials, cable/conductor manufacturing, resistors with negative temperature coefficients, etc. Deterioration of varistor performance, increase in cost and other problems, to achieve the effect of simplifying production process, reducing production cost and excellent resistance performance

Inactive Publication Date: 2010-09-08
GUILIN UNIV OF ELECTRONIC TECH
View PDF3 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The purpose of adding a binder phase to the slurry is to make the functional phase and the functional phase and the substrate better bonded, but this is actually equivalent to doping a large amount of impurities in the functional phase, which will lead to thick film thermistor performance degradation of
Although the electrical properties can be improved by adding a conductive phase, it is difficult to completely eliminate the influence of the incorporation of the binder phase, and it will also greatly increase the cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thick film thermistor slurry, preparation method thereof and thick film thermistor
  • Thick film thermistor slurry, preparation method thereof and thick film thermistor
  • Thick film thermistor slurry, preparation method thereof and thick film thermistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] 1. Preparation of thick film thermistor paste

[0021] 1) Preparation of functional phase: with Bi 2 o 3 、BaCO 3 and Y 2 o 3 as the raw material, according to the composition expression (Ba 0.999 Y 0.001 ) BiO 3 Carry out batching, be the standard of 1:1:2 to add agate ball and deionized water with the mass ratio of ball, material, water, carry out mixing with ball mill ball milling 8 hours, roast at 800 ℃ after drying, heat preservation 4 hours; Then The roasted (Ba 0.999 Y 0.001 ) BiO 3 Ball milling into nano-scale powder;

[0022] 2) Preparation of organic carrier solvent: Weigh 65% terpineol, 12% ethyl cellulose, 1% lecithin and 22% hydrogenated castor oil by weight percentage and dissolve in water at 90-100°C for 5 hours;

[0023] 3) Prepare the slurry: mix the functional phase components and the organic carrier solvent in a weight ratio of 60-80:20-40, and roll with rolls to obtain the product.

[0024] 2. Preparation of thick film thermistor:

[0025...

Embodiment 2

[0027] Same as Example 1, the difference is that Bi 2 o 3 、BaCO 3 and Y 2 o 3 As raw material, preparation (Ba 0.997 Y 0.003 ) BiO 3 Functional phase powder. Table 1 lists the test results.

Embodiment 3

[0029] Same as Example 1, the difference is that Bi 2 o 3 、BaCO 3 and Y 2 o 3 As raw material, preparation (Ba 0.995 Y 0.005 ) BiO 3 Functional phase powder. Table 1 lists the test results.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of a negative temperature thermistor material, in particular to thick film thermistor slurry taking a barium bismuthate base material as a functional phase, a preparation method thereof and a thick film thermistor prepared from the thick film thermistor slurry. The thick film thermistor slurry consists of the functional phase and an organic carrier solvent in a weight ratio of 60-80:20-40, wherein the functional phase is a compound of which the chemical formula is (Ba1-xAx)BiO3. In the formula, x is more than 0 or equal to 0 and less than 0.01; and A is a rare earth metal element and is selected from Y, La, Nd, Sm, Dy and Er. The preparation method comprises the following steps: 1), preparing the functional phase; 2), preparing the organic carrier; and 3), preparing the slurry. Compared with the prior art, the thick film thermistor slurry of the invention has the advantages of avoiding the use of adhesive and realizing low-temperature sintered thick film resistor, along with excellent resistance performance and simple preparation process.

Description

technical field [0001] The invention belongs to the technical field of negative temperature coefficient thermistor materials, in particular to a barium bismuthate (BaBiO 3 ) thick-film negative temperature coefficient thermistor slurry whose base material is a functional phase, its preparation method and thick-film thermistor prepared by using the thick-film thermistor slurry. Background technique [0002] Thick film circuits can be widely used in various fields such as household electronic products, communication equipment, measurement and automatic control systems, cutting-edge electronic computers, aviation and aerospace, and its application range is still expanding. Thick film electronic paste products are electronic functional materials integrating materials, metallurgy, chemical industry, and electronic technology. They are the basic materials for hybrid integrated circuits, sensitive components, surface assembly technology, resistor networks, displays, and various ele...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/20H01B13/00H01C7/04
Inventor 李旭琼骆颖刘心宇周昌荣陈国华
Owner GUILIN UNIV OF ELECTRONIC TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com