Method for preparing semiconductor secondary grid-metal primary grid crystalline silicon solar battery

A technology for solar cells and semiconductors, applied in semiconductor devices, circuits, electrical components, etc., can solve the problems of complex manufacturing process and high cost, and achieve the effects of simple process, reduced raw material cost, and reduced usage

Inactive Publication Date: 2010-09-08
EOPLLY NEW ENERGY TECH
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  • Summary
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  • Description
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Problems solved by technology

Although these methods all have finer solar cell metal electrodes and reduce the shading area of ​​the metal electrodes, their manufacturing processes are relatively complicated and costly, and it is difficult to compare with the simplicity, low cost, high output and high automation of the screen printing process. Compared with other characteristics

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  • Method for preparing semiconductor secondary grid-metal primary grid crystalline silicon solar battery
  • Method for preparing semiconductor secondary grid-metal primary grid crystalline silicon solar battery

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Embodiment Construction

[0012] see figure 1 , this specific embodiment adopts the following technical scheme: it is composed of a plurality of semiconductor sub-gates 1 and several metal electrode busbars 2, and several metal electrode busbars connect a plurality of semiconductor sub-gates 1 to each other ; Its preparation method comprises the following steps: 1. Texturing the surface of the silicon chip, 2. Screen-printing thin lines of phosphorus paste, 3. Diffusion at high temperature to obtain thin grid lines with low sheet resistance and other emission areas with suitable sheet resistance, 4. Remove the peripheral or back PN junction, 5. Remove the phospho-silicate glass, 6. Coat the anti-reflection film, 7. Screen print the back electrode and the back aluminum paste and dry them. 8. Screen print the front silver paste main grid Line, nine, electrode co-sintering.

[0013] The square resistance of the plurality of semiconductor sub-gates 1 is less than 10 ohms, the line width is between 10-150 ...

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Abstract

The invention relates to the technical field of a metal electrode of a crystalline silicon solar battery, in particular to a method for preparing a semiconductor secondary grid-metal primary grid crystalline silicon solar battery. The semiconductor secondary grid-metal primary grid crystalline silicon solar battery consists of a plurality of strips of semiconductor secondary grids (1) and a plurality of strips of metal electrode primary grid lines (2). The method has the advantages of completely utilizing the advantages, such as simpleness, low cost, high yield and high automation degree, of a screen printing process, effectively reducing the light-shading area of the metal electrode of the solar battery, and improving the conversion efficiency of the metal electrode of the solar battery.

Description

Technical field: [0001] The invention relates to the technical field of metal electrodes of crystalline silicon solar cells, in particular to a method for preparing a semiconductor sub-gate-metal main grid crystalline silicon solar cell. Background technique: [0002] Due to the good electrical conductivity of metals, currently the front electrodes of crystalline silicon solar cells are all made of metals, especially metallic silver. Specifically, the metal electrode paste is printed on the silicon wafer with a screen plate to form a certain electrode pattern, and then sintered at a high temperature to solidify the metal and form an alloy and ohmic contact with the silicon wafer at the connection. When metal is used to prepare the front electrode of the solar cell, due to the limitations of the metal electrode paste and the screen printing process itself, it is difficult to make the width of the metal grid line very fine, which will result in a larger electrode in the light-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 屈盛
Owner EOPLLY NEW ENERGY TECH
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