Method for preparing polycrystalline silicon thin film based on metal induction

A polysilicon thin film, metal-induced technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor performance, many residues, and complex preparation processes, shortening process time, and eliminating alignment plate dislocations effect of the problem

Inactive Publication Date: 2010-09-15
GUANGDONG SINODISPLAY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0007] In order to overcome the defects of complex preparation process, many residues and poor performance of existing polysilicon thin films, the present invention proposes a method for preparing polysilicon thin films based on metal induction

Method used

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  • Method for preparing polycrystalline silicon thin film based on metal induction
  • Method for preparing polycrystalline silicon thin film based on metal induction
  • Method for preparing polycrystalline silicon thin film based on metal induction

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preparation example Construction

[0041] image 3 A flowchart showing a method for preparing a polysilicon thin film according to an embodiment of the present invention. In general, if image 3As shown, the method includes: depositing a silicon oxide or silicon nitride barrier layer on a glass substrate, and depositing an amorphous silicon film (step 301); forming a layer of silicon oxide or silicon nitride capping layer on the amorphous silicon film , and etch the induction port (step 302) on the cover layer; form a layer of metal induction film on the cover layer, make the metal induction film contact with the amorphous silicon film at the induction port (step 303); carry out the first step Annealing process, polysilicon islands are obtained in the amorphous silicon film below the induction port (step 304); a metal absorption layer is deposited on the metal induction film, and then the second annealing process is performed to form crystallized amorphous with uniform distribution of crystal grains Silicon t...

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Abstract

The invention provides a method for preparing a polycrystalline silicon thin film. The method comprises the following steps of: depositing a barrier layer on a glass substrate and depositing an amorphous silicon thin film; forming a covering layer on the amorphous silicon thin film and etching an induction hole on the covering layer; forming a metal induction thin film on the covering layer to enable the metal thin film to contact the amorphous silicon thin film at the induction hole; annealing for the first time to obtain a polycrystalline silicon island from the amorphous silicon thin film below the induction hole; depositing a metal absorption layer on the metal induction thin film, and annealing for the second time to form a crystallization thin film with uniformly distributed crystal grains; and removing the metal absorption layer and the covering layer.

Description

technical field [0001] The invention relates to the technical field of polysilicon film preparation, and more specifically, the invention relates to a method for preparing a polysilicon film based on metal induction. Background technique [0002] The preparation process of amorphous silicon thin film transistor (TFT) is mature and relatively simple, with high yield and low cost. Most of the existing active matrix displays use amorphous silicon thin film transistors. However, amorphous silicon thin film transistors have low field-effect mobility and poor device stability, making it difficult to meet the requirements of fast-switching color sequential liquid crystal displays, current-driven organic light-emitting diode displays, and integrated displays. The low-temperature polysilicon thin film transistor prepared on the glass substrate and obtained by annealing furnace or laser heating has high mobility and good device stability, and is suitable for the preparation of fast sw...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/20H01L21/324
Inventor 黄宇华黄飚彭俊华
Owner GUANGDONG SINODISPLAY TECH
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