Method for preparing lanthanum nickel oxide thin-film material

Abstract

The invention discloses a method for preparing lanthanum nickel oxide thin-film materials. The method comprises the following steps: weighing nickel acetate and lanthanum acetate according to 1:1 of molar ratio of nickel to lanthanum; respectively adding the nickel acetate and lanthanum acetate into propanoic acid which is taken as a solvent; respectively stirring for 10-30min at the temperature of 40-70 DEG C to obtain nickel acetate solution; adding lanthanum acetate to the nickel acetate solution; stirring the solution at the temperature of 40-70 DEG C; stirring to transparent state at room temperature to obtain the mixed solution; filtering the mixed solution to obtain a precursor colloid of the lanthanum nickel oxide; placing the precursor colloid of the lanthanum nickel oxide on a substrate to rotatably spray into a gel membrane, then pyrolyzing the gel membrane for 15-30min at the temperature of 300-450 DEG C; repeating the above steps until the pyrolysis membrane with needed thickness is acquired; finally, placing the pyrolysis membrane at the temperature of 600-750 DEG C for annealing for 60-240min to prepare into the lanthanum nickel oxide thin-film material with the membrane thickness of 10nm-1mu m, wherein the material has wide application prospects in the fields, such as membrane materials, information materials, superconducting materials and the like.

Description

technical field [0001] The invention relates to a preparation method of a thin film material, in particular to a preparation method of a lanthanum nickelate thin film material. Background technique [0002] At present, the material used as the bottom electrode of ferroelectric thin film devices is mainly metal platinum (Pt). Although it has good conductivity, the adhesion and fatigue resistance of ferroelectric thin film on platinum are poor, and platinum The manufacturing cost of the electrodes is relatively high. Metal oxides with a perovskite structure have recently been discovered, such as strontium ruthenate (SrRuO 3 ), strontium-doped lanthanum cobaltate (La 0.5 Sr 0.5 CoO 3 ) and lanthanum nickelate (LaNiO 3 ) has good conductive behavior and can be used as the bottom electrode of ferroelectric thin film. Among them, lanthanum nickelate has attracted extensive attention due to its excellent electrical conductivity and low cost. In order to obtain the lanthanum ...

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Problems solved by technology

However, this preparation method has disadvantages. First, the lanthanum nitrate in the precursor raw material is very easy to absorb water, which not only easily causes the stoichiometric ratio of the prepared precursor solution to be inaccurate, but also faces the difficulty of long-term storage; secondly, Lanthanum nitrate is used in the precursor raw material, which is easy to cause environmental pollution; again, in order to prevent the cracking of the finished lanthanum nickelate film, formamide must be used in the precursor raw material, which increases the types of precursor raw materials and makes the preparation process complicated. , which increases the cost of production

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