Anti-reflective film and preparation method thereof

An anti-reflection film and light reflection technology, applied in the field of plasma, can solve the problems of affecting the photoelectric conversion efficiency of solar cells, large differences in chemical composition and optical properties, uneven changes in refractive index, etc. Optical characteristics, simple operation effect

Active Publication Date: 2010-10-20
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology

[0006] However, the above-mentioned double-layer anti-reflection film composed of silicon nitride and silicon oxide has a large difference in chemical composition and optical properties between the two layers, resulting in uneven changes in the refractive index at the interface between the two layers and poor overall optical performance. Decrease, thereby affecting the photoelectric conversion efficiency of solar cells

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  • Anti-reflective film and preparation method thereof
  • Anti-reflective film and preparation method thereof
  • Anti-reflective film and preparation method thereof

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Embodiment approach

[0026] see figure 1 The first embodiment of the anti-reflection film provided by the present invention includes a silicon nitride film layer, a silicon oxynitride film layer and a silicon oxide film layer sequentially deposited on the surface of a silicon wafer. Wherein, the refractive index of each film layer gradually decreases from inside to outside, and here, from inside to outside refers to the direction from the silicon nitride film layer to the silicon oxide film layer.

[0027] Specifically, the thickness of the silicon nitride film layer is about 9-12 nm, and the refractive index is about 2.1-2.4. For example, the thickness of the film layer can be approximately 10 nm, and of course the thickness can be appropriately increased or decreased as required, as long as it can satisfy the passivation effect on the silicon wafer without causing light absorption loss.

[0028] On the silicon nitride film layer are silicon nitride oxide film layer and silicon oxide film layer ...

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Abstract

The invention provides an anti-reflective film, which is used for reducing the light reflection of the surface of a solar battery and comprises a silicon nitride film, a silicon oxynitride film and a silicon oxide film which are deposited on the surface of a silicon slice in sequence from inside to outside. The invention also provides a preparation method of the anti-reflective film, which comprises the following steps: (1) depositing the silicon nitride film on the surface of the silicon slice; (2) depositing the silicon oxynitride film on the surface of the silicon nitride film to enable the refractive index of the silicon oxynitride film to be less than that of the silicon nitride film; and (3) depositing the silicon oxide film on the surface of the silicon oxynitride film to enable the refractive index of the silicon oxide film to be less than that of the silicon oxynitride film. The anti-reflective film has even overall refractive index change and good optical/electrical properties and an anti-reflective effect; the preparation method is simple and is easy to realize and can provide the anti-reflective film which has even refractive index change and can effectively improve photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the field of plasma technology, in particular to an anti-reflection film and a preparation method thereof. Background technique [0002] With the development of science and technology, the development and utilization of solar energy resources have been widely valued. As a new type of power generation device that can convert light energy into electrical energy, solar cells have been applied in many technical fields. At the same time, in order to further improve the photoelectric conversion efficiency of existing solar cells, the majority of scientific researchers are still making unremitting efforts. [0003] Deposit a layer of anti-reflection film on the surface of the solar cell to reduce the reflection of light on the surface of the cell, thereby effectively improving the photoelectric conversion efficiency of the cell; at the same time, the anti-reflection film can also play a role in surface passivation and bulk passivatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0232H01L31/0216H01L31/18B32B9/04B32B7/02
CPCY02P70/50
Inventor 胡立琼
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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