Thin film mainly composed of titanium oxide, sintered sputtering target suitable for the production of thin film mainly composed of titanium oxide, and method for production of thin film mainly composed of titanium oxide
A manufacturing method and titanium oxide technology, which can be applied in sputtering coating, optical record carrier manufacturing, recording/reproducing by optical methods, etc., can solve problems such as low transmittance, achieve less decrease in reflectivity, and inhibit film formation The effect of speed reduction and excellent transmittance
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Embodiment 1
[0063] Titanium oxide (TiO) with an average particle size of 10 μm and a purity of 4N (99.99%) 2 ) and silver powder with an average particle size of 15 μm and a purity of 3N (99.9%) as raw materials. TiO 2 :Ag=99:1 (atomic %) ratio was prepared and mixed.
[0064] 1 kg of this mixed powder was mixed with a wet ball mill so that silver was uniformly dispersed in the titanium oxide powder. Then, the dry mixture obtained by evaporating moisture was filled into a carbon mold and hot pressed. Hot pressing conditions are: 900°C, surface pressure 300kgf / cm 2 range. The obtained sintered body was machined to form a target of φ152 mm, 5 mmt. As a result, a target with a density of 96% and a resistivity of 7 Ωcm was obtained. The particle diameter of the Ag phase in the target was 15 μm. There is no abnormal discharge during sputtering. The results are shown in Table 1.
[0065] Table 1
[0066]
target composition
Resistivity
sputtering atmosphere ...
Embodiment 2
[0074] Titanium oxide (TiO) with an average particle size of 10 μm and a purity of 4N (99.99%) 2 ) and silver powder with an average particle size of 10 μm and a purity of 3N (99.9%) as raw materials. TiO 2 :Ag=90:10 (atomic %) was prepared and mixed.
[0075] 1 kg of this mixed powder was mixed with a dry mixer so that silver was uniformly dispersed in the titanium oxide powder. Then, this mixed powder was filled in a carbon mold and hot pressed. Hot pressing conditions are: 920°C, surface pressure 350kgf / cm 2range. The obtained sintered body was machined to form a target of φ152 mm, 5 mmt. As a result, a target with a density of 96% and a specific resistance of 2Ωcm was obtained. The particle diameter of the Ag phase in the target was 10 μm. There is no abnormal discharge during sputtering.
[0076] The results are also shown in Table 1.
[0077] Then, using the sputtering target manufactured in this way, a sputtering film was formed on a glass substrate. The sputt...
Embodiment 3
[0094] Titanium oxide (TiO) with an average particle size of 10 μm and a purity of 4N (99.99%) 2 ) and silver powder with an average particle size of 10 μm and a purity of 3N (99.9%) as raw materials. TiO 2 :Ag=99.9:0.1 (atomic %) ratio was prepared and mixed.
[0095] 1 kg of this mixed powder was mixed with a dry mixer so that silver was uniformly dispersed in the titanium oxide powder. Then, this mixed powder was filled in a carbon mold and hot pressed. Hot pressing conditions are: 920°C, surface pressure 350kgf / cm 2 range. The obtained sintered body was machined to form a target of φ152 mm, 5 mmt. As a result, a target with a density of 98% and a specific resistance of 10 Ωcm was obtained. The particle diameter of the Ag phase in the target was 10 μm. There is no abnormal discharge during sputtering.
[0096] The results are also shown in Table 1.
[0097] Then, using the sputtering target manufactured in this way, a sputtering film was formed on a glass substrate...
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