Heat characterization method and structure for monitoring temperature of transistor in real time

Abstract

The invention provides a heat characterization method and a heat characterization structure for monitoring the temperature of a transistor in real time, which belong to the field of monitoring techniques for characterizing the heat effect of the transistor. In the method, a material layer is arranged on a transistor gate to form a P-N junction with the transistor gate, and the temperature of the transistor element is measured according to the IV characteristic of the P-N junction. In the invention, a single element is combined with a high-sensitivity temperature control diode, the actual temperature of the element is approached more really because of the positioning of the PN junction on a polysilicon gate above a channel, the temperature of the element can be monitored in real time, and the operation is simple. In a large-scale transistor array, the structure is used for solving the problems such as real-time chip temperature monitoring and heat point distribution, heating the element locally and accordingly analyzing problems such as element reliability and circuit mismatch. Besides, the area of the structure corresponds to the size of the element, so the structure can be integrated on a chip.

Description

technical field [0001] The invention belongs to the technical field of characterizing the thermal effect of transistors, and in particular relates to a thermal characterization method for real-time monitoring of transistor temperature. Background technique [0002] With the reduction of the feature size of semiconductor devices, the continuous improvement of the integration density and switching speed of the devices leads to the rapid increase of the power consumption density of the chips. Especially when the size of the device enters the nanoscale (<100nm), the static power consumption becomes obvious, and the increase of the temperature will lead to the increase of the leakage current of the device, so that the total power consumption of the chip will be further increased. At the same time, the introduction of new materials and new device structures, such as the use of new device structures such as SOI materials and stressed silicon materials, as well as FinFETs and nan...

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Problems solved by technology

For the method of using channel subthreshold current or subthreshold swing, as long as the test time (ie gate voltage scan time) is short enough, the device temperature can be measured more accurately, but this method must interrupt the working state of the device. , affects the normal operation of the circuit, and cannot measure the temperature of the device in real time

Muth et al. proposed to use the relationship between the logarithm of the drain-body or source-body P-N junction current and the forward bias voltage to characterize the device temperature, but this calculation will introduce measurement noise and is related to the process of the source and drain of the device

Also, for SOI materials, this method is not applicable

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