Capacitor, semiconductor device, method for manufacturing the capacitor, and method for manufacturing the semiconductor device
A manufacturing method and capacitor technology, applied in the field of capacitors, can solve the problems that microfabrication technology is difficult to fully cope with
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no. 1 approach
[0069] Figure 8 is a schematic sectional view showing the capacitor according to the first embodiment of the present invention. As shown in the figure, the capacitor 80 according to the first embodiment includes: a silicon substrate 81, an insulating layer 82 formed on the substrate 81, a lower electrode layer 83 formed on the insulating layer 82, and a lower electrode layer 83 formed on the lower electrode layer 83. The dielectric layer 84 on the upper surface, the upper electrode layer 85 formed on the dielectric layer 84, the leakage prevention layer 86 covering the side wall of the above-mentioned laminated structure, the insulating part covering a part of the upper surface of the upper electrode layer 85 and the leakage prevention layer 86 87 , and the extraction electrode 88 buried in the connection hole 87 a formed on the insulating portion 87 .
[0070] In this embodiment, insulating layer 82 is a silicon oxide film formed by thermally oxidizing the surface of silico...
no. 2 approach
[0109] Next, a capacitor according to a second embodiment of the present invention will be described.
[0110] Figure 12 is a schematic cross-sectional view showing a capacitor according to the second embodiment. and Figure 8 It can be seen from the comparison that the capacitor 90 according to the second embodiment differs from the capacitor 80 in that it does not have layers corresponding to the first dielectric layer 84a and the third dielectric layer 84c of the capacitor 80 according to the first embodiment, and is otherwise the same as Capacitor 80 is the same. In other words, in the capacitor 90 according to the second embodiment, the dielectric layer 84 has only the second dielectric layer 84b formed of an amorphous dielectric material.
[0111] Capacitor 90 having such a structure can be manufactured by not performing deposition of SiN film 840a using a sputtering device in the above-mentioned "dielectric film forming process", but depositing SiN film 840a on SiN ...
no. 3 approach
[0114] Next, a capacitor according to a third embodiment of the present invention will be described.
[0115] Figure 13 is a schematic sectional view showing a capacitor according to the third embodiment. and Figure 8 It can be seen from the comparison that the capacitor 91 according to the third embodiment differs from the capacitor 80 in that it does not have layers corresponding to the second electrode layer 83b and the third electrode layer 85a of the capacitor 80 according to the first embodiment, and is otherwise the same as the capacitor 80 according to the first embodiment. Capacitor 80 is the same. In other words, in the capacitor 91 according to the third embodiment, the lower electrode layer 83 has only the first electrode layer 83a formed of a crystalline conductive material, and the upper electrode layer 85 has only the fourth electrode formed of a crystalline conductive material. Layer 85b.
[0116] The capacitor 91 having such a structure can be manufactur...
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Abstract
Description
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Application Information
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