Method for preparing nanometer channel with molybdate nanowires

A technology of nano-channel and trimolybdate, which is applied in the direction of nano-structure manufacturing, nano-technology, nano-technology, etc., can solve the problem that it is difficult to change the cross-sectional shape of the channel

Inactive Publication Date: 2010-12-22
PEKING UNIV
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most methods have a common limitation, that is, it is difficult to change the cross-sectional shape of the channel.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing nanometer channel with molybdate nanowires
  • Method for preparing nanometer channel with molybdate nanowires
  • Method for preparing nanometer channel with molybdate nanowires

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] In this embodiment, the following steps are used to prepare nanochannels:

[0022] 1. Prepare pure and uniform K 2 Mo 3 o 10 ·3H 2 O nanowire crystals. The specific preparation method can adopt the method proposed by the patent No. ZL200810119770.2, titled "A Preparation Method of Potassium Trimolybdate Trihydrate Nanowire". The radial cross section of the nanowires prepared by this method is circular.

[0023] 2. Disperse the prepared nanowires on the silicon substrate. During the dispersion process, the nanowires should be dispersed as thoroughly as possible, and the phenomenon of overlapping or clustering should be eliminated as much as possible. The dispersion density of nanowires on the silicon substrate is within 100 μm 2 There are about 5. This process can also be carried out with nanoprobes, by which the nanowires are placed in predetermined positions.

[0024] 3. Coat photoresist on the silicon substrate and carry out photoetching according to the desig...

Embodiment 2

[0028] In this embodiment, the following steps are used to prepare nanochannels:

[0029] 1. Prepare pure and uniform NaNH 4 Mo 3 o 10 ·H 2 O nanowire crystals.

[0030] 2. Disperse the prepared nanowires on the silicon substrate. During the dispersion process, the nanowires are completely dispersed without overlapping or clustering. per 100μm 2 There are about 5 nanowires on the silicon substrate. This process can also be used to place nanowires at predetermined locations via nanoprobes.

[0031] 3. A chromium thin film is grown on the silicon substrate, and the thickness of the chromium thin film is about 200nm.

[0032] 4. Dissolve the nanowires as the sacrificial material with deionized water, and the grooves left are nanochannels. The nanochannels were made against the silicon substrate on one side, and the other sides of the channel were chromium. Such as figure 2 shown.

[0033] The nanochannels prepared by this method are basically all hexagonal in cross-se...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for preparing a nanometer channel with molybdate nanowires, belonging to the nanometer technical field. The method comprises the following steps: a) preparing molybdate nanowires; b) dispersing the nanowires on a substrate; c) preparing the wall material of the nanometer channel on the substrate, wherein the wall material of the nanometer channel covers the nanowires; and d) dissolving the nanowires with the designated polar solvent to obtain the nanometer channel. The invention can be used to prepare the nanometer channel and has wide application prospect in local chemical analysis, local physical measurement, heat engineering, disease detection, cell screening, molecular chemistry test, mRNA extraction and passivation, protein crystallization and other aspects.

Description

technical field [0001] The invention relates to a method for preparing a nanochannel by using a soluble trimolybdate nanowire, which belongs to the field of nanotechnology. Background technique [0002] With the development of nanotechnology, nanochannel technology, especially micro-nanofluidic system chip technology based on nanochannel technology and a combination of various nanotechnology has received more and more attention. These technologies have broad application prospects in local chemical analysis, local physical measurement, thermal engineering, disease detection, cell screening, molecular chemical testing, information ribonucleotide extraction and passivation, protein crystallization, etc. [0003] The structure, cross-section, diameter, and the properties of the material used to prepare the nanochannel will have a direct or indirect impact on the transport process of substances in the channel. Therefore, it is of great significance to prepare nanochannels with va...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00
Inventor 龚巍巍薛炯微许胜勇
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap