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Field effect transistor chiral sensor and manufacture method thereof

A field-effect transistor and sensor technology, applied in the field of sensors, can solve the problems of easy pollution and sensor application limitations, and achieve the effects of no reagent consumption, reduced environmental pollution, and easy deviceization

Inactive Publication Date: 2010-12-22
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when this method detects chiral molecules, the main substance and the chiral selective agent are combined in the liquid phase, and the main substance system to be tested is easily polluted. Generally, it can only be used once, and the application of the sensor is greatly limited.

Method used

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  • Field effect transistor chiral sensor and manufacture method thereof
  • Field effect transistor chiral sensor and manufacture method thereof
  • Field effect transistor chiral sensor and manufacture method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] What is obtained by this preparation method is a top-contact quantum dot field effect transistor chiral sensor:

[0027] Step 1, sputtering or evaporating a layer of gate electrode 2 with a thickness of 10nm-500nm on the substrate 1, the gate electrode is composed of one or two of Ta, Ti, Cr, W, Mo, Au or Ag.

[0028] Step 2, sputtering or evaporating a layer of high dielectric constant gate insulating layer 3 with a thickness of 150nm to 500nm, the gate insulating layer is made of SiO 2 、 Ta 2 o 5 、Al 2 o 3 、TiO 2 , BZT, or PZT in one or two forms.

[0029] Step 3, by spin coating, inkjet printing or screen printing a layer of active layer 4 with a thickness of 10 nm to 500 nm, wherein the active layer 4 can be one or both of the following two different compounds modified by chiral molecules Combination. They are: (a) Group II-VI compounds; (b) Group III-V compounds.

[0030] Step 4, sputtering, inkjet printing or evaporating a layer of source electrode 5 and d...

Embodiment 2

[0032] What is obtained by this preparation method is a bottom-contact quantum dot field effect transistor chiral sensor:

[0033] Step 1, sputtering or evaporating a layer of gate electrode 2 with a thickness of 10nm-500nm on the substrate 1, the gate electrode is composed of one or two of Ta, Ti, Cr, W, Mo, Au or Ag.

[0034] Step 2, sputtering or evaporating a layer of high dielectric constant gate insulating layer 3 with a thickness of 150nm to 500nm, the gate insulating layer is made of SiO 2 、 Ta 2 o 5 、Al 2 o 3 、TiO 2 , BZT, or PZT in one or two forms.

[0035] Step 3, sputtering, inkjet printing or evaporating a layer of source electrode 5 and drain electrode 6 composed of one or two of Au, Ag, Ti, PEDOT:PSS, etc. on the gate insulating layer 3 .

[0036] Step 4, on the gate insulating layer 3 and the source / drain electrodes, a layer of active layer 4 with a thickness of 10 nm to 500 nm is printed by vacuum thermal evaporation, spin coating, inkjet printing or scre...

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Abstract

The invention discloses a field effect transistor chiral sensor and a manufacture method thereof. By utilizing the structure of a field effect transistor, the chiral sensor comprises a substrate, a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode. The chiral sensor is characterized in that the active layer is made of a quantum dot material with chiral recognizing and detecting function. The quantum dot material of the active layer is a semiconductor nano microcrystal which is modified by chiral molecules and has the size of smaller than 100nm.The invention sensor capable of detecting a chiral substance by using a quantum dot film with the chiral recognizing and detecting function as the active layer of the field effect transistor on the basis of the quantum dot field effect transistor and the manufacture method thereof. The fluorescent chiral molecule modified quantum dot can be also made into a film by the chiral sensor for being used as the field effect transistor active layer, thereby overcoming the defect of chiral molecule detection by the traditional homogeneous phase fluorescent sensor and realizing a more stable detecting signal.

Description

technical field [0001] The invention relates to a sensor for chiral recognition research, in particular to a field effect transistor chiral sensor based on field effect transistor structure and application of quantum dot characteristics and a preparation method thereof. Background technique [0002] The unique properties of quantum dots are based on their own quantum effects. When the particle size enters the nanoscale, size confinement will cause size effects, quantum confinement effects, macroscopic quantum tunneling effects, and surface effects, thus deriving nanosystems with conventional The different low-dimensional physical properties of the system and the micro system show many physical and chemical properties different from those of the macroscopic material. It has extremely broad application prospects in nonlinear optics, magnetic media, catalysis, medicine and functional materials. The continuous development of science and information technology and basic research ...

Claims

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Application Information

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IPC IPC(8): G01N27/414H01L29/78H01L21/336
Inventor 潘革波王亦崔铮
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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