Single-sided chemically mechanical polishing method and device of silicon chip
A technology of chemical machinery and polishing equipment, which is applied in the direction of grinding equipment, grinding machine tools, metal processing equipment, etc., can solve the problems of low cleaning quality of silicon wafers in the post-cleaning system, affecting the surface quality of silicon wafers, and increasing the residence time of silicon wafers. Achieve single-side polishing quality and stability, improve single-side polishing quality, and achieve high-quality single-side polishing
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Embodiment 1
[0037] The silicon wafer single-side chemical mechanical polishing device mainly includes a preliminary polishing table 17 and / or a finishing polishing table 10 , a polishing liquid supply mechanism, an electrical control part, and a rinsing and polishing table 8 . The rinse-polish table 8 has a deionized water rinse-polish supply mechanism. The primary polishing table and the finishing polishing table are independently provided with 2 or more than 3 polishing liquid supply mechanisms, and have a structure for supplying polishing liquid by combining them. The polishing heads on the preliminary polishing table 17, the fine polishing table 10 or the rinsing polishing table 8 are all connected with the polishing spindle rotation, lifting and air suction mechanism, and the polishing spindle rotation, lifting and air suction mechanism are all installed in the rotatable turret 19 above; the silicon wafer reprinting part is equipped with a silicon wafer loading station (LoadStation),...
Embodiment 2、 Embodiment 3
[0070] Embodiment 2 and Embodiment 3: the combination of the preliminary polishing table 17 and the rinsing and polishing table 8, and the combination of the finishing polishing table 10 and the rinsing and polishing table 8.
[0071] The process flow of single polishing and rinsing and polishing combined method adopted by this system equipment is basically similar to that of double polishing and rinsing and polishing combined method. After the silicon wafer is polished once on the primary polishing table 17 or the finishing polishing table 10, the polishing head carrier B18 is directly rotated to the rinsing table 8 for rinsing and polishing. In the process flow of single polishing and rinsing and polishing combination method, the descriptive name of preliminary polishing station 17 or finishing polishing station 10 does not mean that the initial polishing or finishing polishing process will be completed, but only in the description of the double polishing and rinsing and poli...
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