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Post-deposition cleaning methods and formulations for substrates with cap layers

A technique for cleaning, substrates, applied to cladding, HIE, surfaces on metal and dielectric damascene metallization structures to the extent that they depart from the spirit and scope of the present invention

Active Publication Date: 2011-02-09
LAM RES CORP
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

Additionally, defects such as particles and residues must be removed from the entire wafer

Method used

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  • Post-deposition cleaning methods and formulations for substrates with cap layers
  • Post-deposition cleaning methods and formulations for substrates with cap layers

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Embodiment Construction

[0011] The present invention relates to interconnect metallization using a capped conductive metal and dielectric to form damascene metallization structures for electronic devices such as integrated circuits. More preferably, the present invention relates to an interconnect metallization layer for electronic devices comprising a dielectric and a metal (such as copper) with a cap comprising one of the chemical elements cobalt and nickel.

[0012] Operation of embodiments of the present invention will be discussed below, primarily in the context of processing semiconductor wafers, such as silicon wafers used in the manufacture of integrated circuits. The metallization layer for the integrated circuit comprises copper of metal lines, with an electrolessly deposited cap comprising at least one of the chemical elements cobalt and nickel or their alloys, formed as a damascene or dual damascene dielectric structure. Optionally, the dielectric is a low-k dielectric material, such as c...

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Abstract

One embodiment of the present invention is a method of fabricating an integrated circuit. The method includes providing a substrate having a metal and dielectric damascene metallization layer and depositing substantially on the metal a cap. After deposition of the cap, the substrate is cleaned with a solution comprising an amine to provide a pH for the cleaning solution of 7 to about 13. Another embodiment of the presented invention is a method of cleaning substrates. Still another embodiment of the present invention is a formulation for a cleaning solution.

Description

[0001] cross reference [0002] This application claims the benefit of U.S. Patent Application 61 / 016,427 (Docket No. XCR-009), entitled "POST-DEPOSITION CLEANING METHODS ANDFORMULATIONS FOR SUBSTRATES WITH CAP LAYERS," by applicants ArturKOLICS, Shijian LI, Tana ARUNAGIRI, and William THIE, filed at 12 / 21 / 2007. US Patent Application 61 / 016,427 (filed 12 / 21 / 2007) is hereby incorporated in its entirety by this reference. Background technique [0003] The present invention relates to the fabrication of electronic devices, such as integrated circuits; more particularly, the present invention relates to methods and formulations for cleaning substrates having capping layers comprising at least one of the chemical elements cobalt and nickel on metal and dielectric damascene metallization structures. [0004] Cleaning surfaces with miscellaneous components is challenging. This is especially true in some cases, eg for surfaces subject to corrosion and eg for surfaces with different ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/302H01L21/306
CPCC11D11/0047C11D7/3209H05K3/0085H01L21/76861H01L21/02068H01L21/76849C11D2111/22
Inventor 阿尔图尔·科利奇李时健蒂鲁吉拉伯利·阿鲁娜威廉·蒂
Owner LAM RES CORP
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