Stabilizing network structure of monolithic integrated circuit of intelligent network processor double heterojunction bipolar transistor (InP DHBT) W wave band power amplifier

Abstract

The invention discloses a stabilizing network structure of a monolithic integrated circuit of an intelligent network processor double heterojunction bipolar transistor (InP DHBT) W wave band power amplifier, which is composed of a resistance-sector capacitance tandem network which are connected to the collector terminal of the InP DHBT device in parallel, wherein one end of the resistance is connected to the collector terminal of the InP DHBT device, the other end of the resistance is connected to the centre of a circle of the sector capacitance, and the resistance is connected with the sector capacitance in series. In practical application, the structure can be completely compatible with an InP DHBT semiconductor technology, and the low-frequency instability of the power amplifier in wide band width can be effectively eliminated by using the structure so as to effectively inhibit common low-frequency oscillation in the W wave band power amplifier and improve the stability and the wideband property of the W wave band power amplifier; and meanwhile, the stabilizing network has tiny influence on the whole gain of the circuit and can obtain high-gain power amplifier property.

Description

technical field [0001] The invention relates to the technical field of design and manufacture of semiconductor devices and integrated circuits, in particular to a stable network structure applied to monolithic integrated circuits of indium phosphide double heterojunction bipolar transistors (InP DHBT) W-band (94GHz) power amplifiers . Background technique [0002] Due to its excellent high frequency and breakdown performance, InP DHBT has become one of the best choices for the design and manufacture of monolithic integrated circuits for millimeter wave and submillimeter wave power amplifiers. The W-band (94GHz) power amplifier monolithic integrated circuit using InP DHBT process technology has a wide range of applications in military and civilian applications such as wireless communication, radar and millimeter wave imaging. An important and difficult point in power amplifier design is the stability of the circuit, because InP DHBT has a high gain in the lower frequency ban...

AI Technical Summary

Problems solved by technology

However, with this kind of stabilization network, due to the influence of the resistors, the gain of the entire power amplifier circuit will be greatly affected, making it difficult to obtain high-gain circuit performance; moreover, this stabilization network is a narrow-band structure with poor broadband performance. Difficult to meet wideband requirements for stable networks in W-band power amplifiers

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