Method for preparing single-layer high-activity titanium dioxide thin film

A titanium dioxide, high-activity technology, applied in the direction of metal material coating process, etc., can solve the problem that the photocatalytic efficiency of titanium dioxide cannot be satisfied, titanium dioxide powder is difficult to make a dense and strong film, and the application is limited, so as to achieve a controllable film thickness , enhance the transfer efficiency, combined with a firm effect

Active Publication Date: 2012-06-27
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

Because titanium dioxide is non-toxic, harmless, environmentally friendly and cheap, in addition to being used in photocatalytic water splitting, it is also widely used in photodegradation, dye-sensitized solar cells, photoelectrochemistry, biochemistry, and self-cleaning. However, titanium dioxide photocatalysis Efficiency still does not meet the needs of the application
How to prepare titanium dioxide with a dominant (001) crystal plane has become the focus of research, and it has recently been reported that TiF 4 Titanium dioxide crystals with dominant (001) crystal planes are prepared as precursors, but the titanium dioxide crystals with dominant (001) crystal planes prepared by this method are powders with a particle size greater than 1 μm, so this (001) dominant titanium dioxide powder is very difficult. Difficult to be made into dense and robust films, which limits its effective applications in photoelectrodes, dye-sensitized solar cells, self-cleaning surfaces, etc.

Method used

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  • Method for preparing single-layer high-activity titanium dioxide thin film
  • Method for preparing single-layer high-activity titanium dioxide thin film
  • Method for preparing single-layer high-activity titanium dioxide thin film

Examples

Experimental program
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Effect test

Embodiment 1

[0028] Anhydrous ethanol and deionized water were ultrasonically cleaned 0.25mm×10mm×30mm titanium flakes, and after vacuum drying at 80°C, clean titanium flakes with no oxide layer on the surface were obtained. Then, the clean titanium sheet was placed in an 80 mL stainless steel reactor containing 40 mL of 10 mM diluted hydrofluoric acid aqueous solution and lined with polytetrafluoroethylene. After the reaction kettle was sealed, it was put into an oven and heated at 140°C for 10 hours. The reacted titanium flakes were taken out, washed with deionized water and dried at 80°C to obtain a titanium flake with a single-layer (001) crystal plane titanium dioxide film formed on the surface .

[0029] Such as figure 1 As shown, the exposed surface of the titanium dioxide film formed on the titanium sheet is a highly active (001) crystal plane. The film is composed of tooth-like titanium dioxide crystal particles with a particle size of 130 nm and high crystallinity of the film. The ...

Embodiment 2

[0035] Anhydrous ethanol and deionized water were ultrasonically cleaned 0.25mm×10mm×30mm titanium flakes, and after vacuum drying at 80°C, clean titanium flakes with no oxide layer on the surface were obtained. Then, the clean titanium sheet was placed in an 80 mL stainless steel reactor containing 40 mL of 8 mM dilute hydrofluoric acid aqueous solution and lined with polytetrafluoroethylene. After the reactor was sealed, it was put into an oven and heated at 120°C for 10 hours. The reacted titanium flakes were taken out, washed with deionized water and dried at 80°C to obtain a titanium flake with a monolayer (001) crystal plane titanium dioxide film formed on the surface .

[0036] Such as Image 6 As shown, the titanium dioxide (001) crystal face film synthesized under this condition is a titanium dioxide crystal, the size of the titanium dioxide crystal particle is 300nm, the film is composed of anatase and rutile phase titanium dioxide, the ratio of anatase and rutile It i...

Embodiment 3

[0038] Anhydrous ethanol and deionized water were ultrasonically cleaned 0.2 g of titanium blocks, and after vacuum drying treatment at 80° C., a clean titanium block with no oxide layer on the surface was obtained. Then, the clean titanium block was placed in an 80 mL stainless steel reactor containing 40 mL of 15 mM dilute hydrofluoric acid aqueous solution and lined with polytetrafluoroethylene. After the reaction kettle was sealed, it was put into an oven and heated at 140℃ for 15h. The reacted titanium block was taken out, washed with deionized water and dried at 100℃ to obtain a titanium block with a monolayer (001) crystal plane titanium dioxide film formed on the surface .

[0039] Such as Figure 7 As shown, the titanium dioxide (001) crystal face film synthesized under this condition is a titanium dioxide crystal, the size of the titanium dioxide crystal particle is 120nm, the film is composed of anatase and rutile phase titanium dioxide, the ratio of anatase and rutil...

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Abstract

The invention relates to a preparation method for forming single-layer high-activity (001) crystal surface dominating titanium dioxide thin films on different substrates, in particular to the method for growing the (001) crystal surface dominating titanium dioxide thin film consisting of single-layer titanium dioxide particles on a metallic titanium or titanium alloy substrate by a wet chemical process, which solves the problems that (001) dominating titanium dioxide powder difficultly forms a (001) plane totally positioned on a surface and that a compact thin film is difficult to form. In the method, the substrate is placed into a reaction kettle containing the aqueous solution of hydrofluoric acid, and heating treatment is performed at 100 to 200 DEG C for 6 to 24 h to obtain the single-layer (001) crystal surface dominating titanium dioxide thin film. The single-layer (001) crystal surface dominating titanium dioxide thin film consists of anatase and rutile in the radio of 95:5 to 80:20, has the thickness of 10 to 1,000 nm, the controllable (001) crystal surface ratio of 20 to 91 percent and high photoelectrochemical decomposition of water, and is expected to be widely and effectively applied to photocatalytic devices.

Description

Technical field [0001] The present invention relates to a preparation method for forming a single layer of titanium dioxide film with high activity (001) crystal planes on different substrates, specifically a method for growing a single layer of titanium dioxide particles on a metal titanium or titanium alloy substrate through a wet chemical process ( 001) The method of optimizing the crystal plane of the titanium dioxide film. Background technique [0002] Since Fujishima discovered in 1972 that titanium dioxide can split water to produce hydrogen under the action of light, titanium dioxide and other semiconductor compounds that can be used for photocatalytic decomposition of water to produce hydrogen have attracted extensive attention and in-depth research. Titanium dioxide is non-toxic, harmless, environmentally friendly and inexpensive. In addition to being used for photocatalytic water splitting, it is also widely used in photodegradation, dye-sensitized solar cells, photoel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C22/34
Inventor 成会明王学文刘岗潘剑李峰逯高清
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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